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We describe physically based analytical models for n‐channel amorphous silicon thin film transistors and for n‐ and p‐channel polysilicon thin film transistors. The models cover all regimes of transistor operation: leakage, subthreshold, above‐threshold conduction, and the kink regime in polysilicon thin film transistors. The models contain a minimum number of parameters which are easily extracted and can be readily related to the structural and material properties of the thin film transistors. The models have been verified for a large number of devices to scale properly with device geometry.