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- Fakultät für Ingenieurwissenschaften (7) (entfernen)
This paper proposes an ultra-low inductance half-bridge switching cell with substrate integrated 650V GaN bare dies. A vertical parallel-plate waveguide structure with 100 μm layer thickness results in a commutation loop inductance of 0.5 nH resulting in a negligible drain-source voltage overshoot in the inductive load standard pulse test. On the other hand reliable circuit operation requires an assessment of the isolation strength of the thin dielectric layer in the main commutation loop, because critical high local electric fields might occur between the pads. Measurements of the dielectric breakdown voltage followed by a statistical failure analysis provide a characteristic life of 14.7 kV and a 10% quantile of 13.5kV in the Weibull fitted data. This characteristic life depends strongly on the ambient temperature and drops to 4.1kV at 125°C. Additionally, ageing tests show an increasing in dielectric breakdown voltage after 500h, 1000h and 2000h at 125°C high-temperature storage due to resin densification processes.
Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips
(2019)
We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs.
Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance gives superior switching characteristics compared to circuits with packaged dies. Simulation and experimental results of an inverse double pulse test confirm our expectations. This study further reveals additional benefits of the proposed technology in terms of mechanical stability and thermal interfacing to heat sinks compared to circuits with packaged dies.
A calculation method for a robust servo controller design depending on the sampling time and the processing dead time was developed for mechanically stiff drives. With a test stand for high dynamic and high positioning accuracy, the theoretical calculations for the high bandwidth improvements are verified. The test stand includes a voice coil motor and a power electronic with Gallium Nitride (GaN) power semiconductors for switching frequencies of more than 100kHz.
A discrete-time design method for a robust current controller of a servo drive has been developed. It takes the sampling time, the processing dead time and the dynamic behavior of the A/D converter into account. The theoretical calculations are verified using a test stand for high dynamics. The test stand includes a voice coil motor and power electronics with Gallium Nitride (GaN) power semiconductors for switching frequencies of more than 100 kHz. The bandwidth of the current control loop can be improved from typically 1 kHz to 1.5 kHz with insulated-gate bipolar transistor (IGBT) power semiconductors in state-of-the-art motion control systems to 10 kHz and more.
Today, the automatic separation of polymers from each other in an industrial scale is an unsolved problem. In laboratory environments, two methods are known whereby plastic is sorted either by color or by fluorescence decay time measurements that require fast synchronization and thus expensive equipment. A simple and pragmatic process is proposed to separate plastics from each other: all fluorescent photons are counted in relation to the absorbed photons. A theoretical model and an experimental setup are built in order to determine an apparatus specific quantum efficiency.