Refine
Year of publication
- 2015 (2) (remove)
Document Type
Language
- English (2) (remove)
Has Fulltext
- no (2)
Is part of the Bibliography
- no (2)
Keywords
- Coils (1)
- DRAM retention solder simulation (1)
- Gallium nitride (1)
- Inductors (1)
- Logic gates (1)
- Microelectronics (1)
- Power amplifiers (1)
- Power generation (1)
- Voltage measurement (1)
Institute
- Fakultät für Ingenieurwissenschaften (2) (remove)
Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).
A DDR2 DRAM test setup is developed and implemented on the Griffin III ATE test system from HILEVEL Technologies. The test system provides a raw platform for performing various mixed signal and digital tests. In order to configure patterns easily in a vector format, a software platform is developed to manage test patterns according to the user's analysis needs. As examples, retention test patterns with disabled self-refresh are applied to 2 Gbit DDR2 SDRAM of two different DRAM vendors. The devices are characterized in respect to their intrinsic leakage and data retention behavior under the influence of stress conditions such as temperature or access algorithm. The tests are automated and test data is logged for an off-line data analysis. Data is recorded before and after solder simulation steps in order to observe a retention time degradation.