Refine
Year of publication
Document Type
- Conference Proceeding (102)
- Article (peer reviewed) (34)
- Part of a Book (3)
- Contribution to a Periodical (3)
- Other (2)
- Report (1)
Language
- English (145) (remove)
Has Fulltext
- no (145)
Is part of the Bibliography
- no (145) (remove)
Keywords
- DC/DC converter (7)
- Microelectronics (6)
- fluorescence (5)
- bandwidth (4)
- Fluorescence lifetime imaging (3)
- Image processing algorithms (3)
- Inductors (3)
- Phase shift (3)
- polymer fibers (3)
- DC-DC power converters (2)
- Diode lasers (2)
- EMI (2)
- ESD (2)
- Elektrische Antriebssysteme (2)
- Extrusion (2)
- FD-FLIM (2)
- FPGA (2)
- GaN half-bridge (2)
- GaN power semiconductors (2)
- Image processing (2)
- Leistungselektronik (2)
- Polypropylene (2)
- Spritzguss (2)
- characterization (2)
- coextrusion (2)
- concrete reinforcement (2)
- inductor (2)
- polymer (2)
- polypropylene (2)
- reliability (2)
- servo drives (2)
- smart power device (2)
- switching cell (2)
- wood (2)
- ADC (1)
- Attitude determination (1)
- Automation and Motion (1)
- Automatisierungstechnik (1)
- Automotive engineering (1)
- Bicomponent Fibers (1)
- Capacitive Coupling (1)
- Capacitive coupling (1)
- Coextrusion (1)
- Coils (1)
- Compounding (1)
- Concrete Reinforcement (1)
- Confocal laser scanning microscopy (1)
- Contactless energy transfer (1)
- Cooling (1)
- Custom specific electronics (1)
- DDR4 SDRAM technology (1)
- DRAM Devices (1)
- DRAM Failure Analysis (1)
- DRAM retention solder simulation (1)
- Delta-Sigma (1)
- Design methodology (1)
- District heating systems (1)
- EMC (1)
- EMC modeling (1)
- EMI filter, DGS, GaN-HEMTs (1)
- EMI filter, DGS, GaN-HEMTs, Switching Cell (1)
- Electric propulsion (1)
- Electric-current-assisted sintering (1)
- Electrical Drives (1)
- Electrical drives (1)
- Electronic packaging thermal management (1)
- Electrooptical waveguides (1)
- Engineering (1)
- FLIM (1)
- Failure Analysis (1)
- Fault/anomaly detection (1)
- Fiber Draw Down (1)
- Filament (1)
- Filler Reinforcement (1)
- Filters (1)
- Fluorescence (1)
- GPS (1)
- GaN (1)
- GaN HEMT (1)
- Gallium Nitride (GaN) (1)
- Gallium Nitride Inverter (1)
- Gallium nitride (1)
- Gaussian Process Classifier (1)
- Gaussian process classifier (1)
- Granulate (1)
- HEMT (1)
- HEV (1)
- Half Bridge (1)
- Half-Bridge (1)
- Heating (1)
- High frequency power converter (1)
- High-Temperature Electronics (1)
- High-Temperature Storage (1)
- IGBT (1)
- ISC Measurements (1)
- Inductance (1)
- Inductive Power Transfer (1)
- Inductive Power Transmission (1)
- Industry Applications Society (1)
- Integrated circuit interconnections (1)
- Lasers and electrooptics (1)
- Logic gates (1)
- Low pass filters (1)
- MHz-switching (1)
- MSP430 Launch Pad (1)
- Machine Learning (1)
- Machine learning (1)
- Magnetic Analysis (1)
- Magnetic Near Field Scanning, Machine Learning, Active Expansion Sampling, Method of Moments (1)
- Magnetic Rate Damping (1)
- Magnetic separation (1)
- Magneto-Inductive Device, Wireless Power Transmission, Mutual Inductance (1)
- Manufacturing (1)
- MathWorks' HDL (1)
- Mathematical optimization (1)
- Microcomputer (1)
- MoM modeling (1)
- Mutual Inductance (1)
- Near-Field Scanning (1)
- Neutral-Point-Clamp (NPC) three level inverter (1)
- Orbit prediction (1)
- PV-Cell defects (1)
- Packaging (1)
- Phase modulation (1)
- Photovoltaik (1)
- Pin-on-Disc (1)
- Plastic feeding (1)
- Plastics (1)
- Power Electronics (1)
- Power amplifiers (1)
- Power electronics (1)
- Power generation (1)
- Power system interconnection (1)
- Pressure (1)
- Progressive Expansion Sampling (1)
- Raman spectroscopy (1)
- Reactive Extrusion (1)
- Relaxation Oscillator (1)
- Reliability (1)
- Resistance heating (1)
- Resonators (1)
- SPICE model (1)
- Satellite position (1)
- Satellites (1)
- Self-adaptive (1)
- Servo drive control (1)
- Servo drives (1)
- Shielding tape (1)
- SiPLIT (1)
- Single fiber pull-out test (1)
- Small GEO telecommunications satellite (1)
- Stray light (1)
- Substrate carrier technology (1)
- Temperature (1)
- Thermal conductivity (1)
- Thermal resistance (1)
- Time-variable Inductance (1)
- UHF resonance frequency (1)
- Ultraviolet radiation (1)
- Voltage measurement (1)
- Windings (1)
- Wireless power transfer (1)
- Wireless power transmission (1)
- Wires (1)
- Xilinx XC9572XL CPLD (1)
- Zedboard (1)
- abrasive wear (1)
- acoustic emission (1)
- active PFC (1)
- adhesive conductive EMI shielding tape (1)
- aircraft instrumentation (1)
- back-injection molding (1)
- backside laserprobing (1)
- biocomposites (1)
- bond behavior (1)
- bond strength (1)
- capacitive coupling (1)
- capacitor (1)
- concrete (1)
- core shell fiber (1)
- core-shell fiber (1)
- current control (1)
- data acquisition (1)
- decay time (1)
- degradation (1)
- delta-sigma converter (1)
- drive circuit (1)
- effective resolution (1)
- electrical drive (1)
- electromagnetic coupling (1)
- emissions (1)
- extrusion (1)
- fiber composites (1)
- fibers (1)
- fibre reinforced concrete (1)
- fluorescence lifetime (1)
- fluorescence lifetime imaging (1)
- functional verification (1)
- geosynchronous mission (1)
- half bridge switching cell (1)
- half-bridge switching cell (1)
- half-bridge switching cells (1)
- heel crack (1)
- high temperature electronic packaging (1)
- hyrodynamic sliding (1)
- identification of plastics (1)
- innovative package (1)
- kinematic differential equation (1)
- lifetime (1)
- linear servo drives (1)
- liquid crystal displays (1)
- low multiloop inductance (1)
- low pass filter (1)
- magnetic near field (1)
- manufacturing process (1)
- mechanical properties (1)
- mixed signal devices (1)
- model-based development (1)
- molding compounds (1)
- motor inverter (1)
- parallelization (1)
- pattern analysis (1)
- planar interconnect technology (1)
- plastic sorting (1)
- polyketone (1)
- polymer identification (1)
- polymer-fibres (1)
- polypropylene fibers (1)
- position control (1)
- power cycling capability (1)
- power electronics packaging (1)
- power module (1)
- power module system integration (1)
- power semiconductor devices (1)
- pull-out (1)
- quantum efficiency (1)
- recycling (1)
- renewable materials (1)
- resource efficiency (1)
- satellites (1)
- self-oscillation (1)
- sensors (1)
- surfaces and interfaces (1)
- sustainability (1)
- symmetric satellite bodies (1)
- system simulation (1)
- thermal management (1)
- thermoplastics (1)
- water lubrication (1)
- wear-out failure electrolytic capacitor (1)
- wire bond (1)
- wireless power transfer (1)
- wireless power transfer, inductive power transfer, half-bridge converter, relaxation oscillator (1)
- wood fibers (1)
- wood species identification (1)
- wood-plastic hybrid fabric (1)
Institute
- Fakultät für Ingenieurwissenschaften (145) (remove)
Reliability analysis of power MOSFET’s with the help of compact models and circuit simulation
(2002)
High temperature reliability on automotive power modules verified by power cycling tests up to 150°C
(2003)
This paper proposes an ultra-low inductance half-bridge switching cell with substrate integrated 650V GaN bare dies. A vertical parallel-plate waveguide structure with 100 μm layer thickness results in a commutation loop inductance of 0.5 nH resulting in a negligible drain-source voltage overshoot in the inductive load standard pulse test. On the other hand reliable circuit operation requires an assessment of the isolation strength of the thin dielectric layer in the main commutation loop, because critical high local electric fields might occur between the pads. Measurements of the dielectric breakdown voltage followed by a statistical failure analysis provide a characteristic life of 14.7 kV and a 10% quantile of 13.5kV in the Weibull fitted data. This characteristic life depends strongly on the ambient temperature and drops to 4.1kV at 125°C. Additionally, ageing tests show an increasing in dielectric breakdown voltage after 500h, 1000h and 2000h at 125°C high-temperature storage due to resin densification processes.
Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips
(2019)
We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs.
Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance gives superior switching characteristics compared to circuits with packaged dies. Simulation and experimental results of an inverse double pulse test confirm our expectations. This study further reveals additional benefits of the proposed technology in terms of mechanical stability and thermal interfacing to heat sinks compared to circuits with packaged dies.
Design of a Low Multi-Loop Inductance Three Level Neutral Point Clamped Converter with GaN HEMTs
(2020)
This work shows a numerical and experimental analysis of a Neutral-Point-Clamp (NPC) three level inverter featuring an ultra low inductance printed circuit board (PCB) design in consideration of the mutual inductive and capacitive couplings. The commutation loops in this design are found to be strongly dependent on the vertical thickness of the used prepregs and the core. For vertical thicknesses ≤ 100 μm capacitive coupling must be taken into account in the switching cell design. Experimental measurements of a test set-up with a total PCB thickness of 400 μm results in commutation loop inductances from 1.4 nH up to 3.1 nH. In this set-up, switching tests without external gate resistor showed only a maximum voltage overshoot of 7% at 800 V. Based on a numerical analysis of the NPC cell we propose a further switching performance improvement with significant smaller parasitic inductance due to the application of novel printed circuit technologies such as the integration of bare dies into the printed circuit board or polyimide as an interlayer dielectric material.