Refine
Document Type
Language
- English (13)
Has Fulltext
- no (13)
Is part of the Bibliography
- no (13)
Keywords
- Thin Film Transistors (9)
- Thin film transistors (2)
- Amorphous materials (1)
- Amorphous semiconductors (1)
- Amorphous silicon (1)
- Energy resolution (1)
- Interface states (1)
- Metastasis (1)
- Nitrides (1)
- Stress (1)
Institute
Characterization and Modeling of Frequency Dispersion in Amorphous Silicon Thin Film Transistors
(1997)
Analytical Models for Amorphous Silicon and Polysilicon TFTs for High Definition Display Technology
(1996)
Amorphous Silicon TFTs: Material Characterization, Device Operation, and Bias Stress Modeling
(1995)
Temperature and Frequency Dependent Characteristics of Amorphous Silicon Thin Film Transistors
(1995)
We report temperature measurements of inverted staggered amorphous silicon thin film transistor subthreshold conductance for devices with and without a top silicon nitride passivating layer. Subthreshold conductance activation energies clearly show the different conductance paths in the active layer of these devices. Transistors with no top nitride layer conduct in the bulk amorphous silicon, whereas the devices with a top nitride layer conduct at the interface between the amorphous silicon and the top nitride (a ‘‘back’’ channel). Gate bias stressing and light soaking experiments uphold the existence of the back channel. We also present two‐dimensional simulations that support our interpretation of the experimental data.