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Reliability analysis of power MOSFET’s with the help of compact models and circuit simulation
(2002)
We present a fast and accurate measurement technique for quasi-static magnetic fields by employing a progressive sampling method in an unconfined input space. The proposed machine learning algorithm is tested against uniform sampling on printed circuit board test structures and a buck converter. We prove allocation of multiple, separated regions with predefined lateral field limits at MHz frequencies. The feasibility of equivalent magnetic dipole source modeling based on a small number of samples is demonstrated. Compared to uniform testing, progressive expansion sampling identifies contours of given field limits in less than 3% of the reference measurement time.
Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips
(2019)
We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs.