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- Fakultät für Ingenieurwissenschaften (92) (remove)
Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).
Increased productivity in industrial processes can be achieved by dynamic and accurate positioning of servo drives. Therefore, improvement of servo drive dynamics using latest technologies in the key components such as inverter, control system and position measuring device are investigated. Using Gallium Nitride (GaN) or Silicon Carbide (SiC) semiconductors for motor inverters enables energy efficient operation up to pulse width modulation (PWM) frequencies of 500 kHz. This allows motor filters with small component sizes. As a result, high motor efficiency, low torque ripple, high control bandwidth and almost ideal sinusoidal output voltages are achieved. Experiments on a 200 kHz Gallium Nitride inverter with sine wave motor filter show a current control loop bandwidth of 3.2 kHz and almost ideal sinusoidal phase voltages. The achieved bandwidths of the speed and position control loops are 318 Hz and 106 Hz, respectively.