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Institute
Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).
We present inductive power transfer (IPT) with a half-bridge converter based on differential relaxation self-oscillation. The oscillation dynamics of the converter automatically adapts to variation in the inductive coupling link and changes in the load, respectively. Design equations based on theoretical circuit analysis reveals a high power transfer efficiency (>90%) for alteration of coupling distance in the strong coupling regime. A prototype system employing GaN-HEMTs confirms the theoretically predicted characteristics of the proposed circuit.
We present a novel differential relaxation oscillator for inductive power transfer. The proposed oscillator offers an automatic adaption of the oscillation period to a change in the power link impedance, which ensures a high efficient operation for variable loads and coupling factors. A detailed circuit model of the self-oscillation system is provided with analytical design equations. We find a large self-oscillation range for variable coupling factors and loads. The theoretical results are confirmed by circuit simulation and measurements carried out on a low-power demonstrator system. We demonstrate non-resonant and robust self-adaption of the relaxation oscillator to coupling factors ranging from k=0.6-0.9.
In this research we present a short distance capacitively coupled wireless power transfer (WPT) system with a self-oscillating half-bridge converter, which uses a positive feedback signal from the WPT system. By this novel implementation we find additional features of the system compared to linear amplifier based systems. With the DC bias voltage supplying the power converter, we achieve a controllable output power, tunable self-oscillation frequency and extension of the self-oscillation range. We present the analytical expressions for the converter waveforms. The theoretical analysis is confirmed by circuit simulation results and measurements on a prototype featuring a half-bridge converter with Gallium-Nitide (GaN) HEMTs. We achieve a system efficiency of 93% at a load power of 83W and 150kHz switching frequency.
The variation of the contact impedance of adhesive conductive EMI shielding tapes under high temperature storage (HTS) of 110degC is investigated. The adhesive tapes under test are implemented as signal return paths in microstrip lines. Changes in the ground plane impedance by adhesive deterioration are analyzed by S-parameter measurements from 1MHz to 3GHz. A circuit model for contact impedance degradation is proposed and applied in simulation of board level shielding. Contact resistance and contact capacitance are found to increase significantly after 2400h, causing a declined magnetic field shielding effectiveness by 30 dB below 500 MHz.
A gate drive circuit for gallium nitride (GaN) enhancement mode (e-mode) transistors is presented, which avoids parasitic turn-on of the power devices in the halfbridge configuration. New e-mode GaN devices turn on at very low threshold voltages between 1V and 2V. This makes the transistors highly sensitive to spurious turn-on and thus reduces the required safety margin of the gate drive signals. To avoid this parasitic turn-on, a very low gate loop impedance is required. This prevents the halfbridge against bridge shorts during the switching events and guarantees stable gate drive control with increased switching efficiency. The new gate drive circuit is developed in a SPICE simulation environment and verified in a prototype setup by a double pulse test. The simulation matches very well with the experimental result and demonstrates the suppression of parasitic semiconductor turn-on with the proposed gate drive. Furthermore the dissipated switching energy is reduced, compared to a standard gate drive circuit. High DCDC converter efficiency of 98.67% at 1kW output power is achieved by using the driving circuit for a buck converter prototype with 200kHz switching frequency.