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The recent developments in power semiconductor devices and increasing demands on reliability as well as on operation performance require innovative package technologies. Such a novel package technique based on a Planar Interconnect Technology (SiPLIT®) for power modules is introduced in this work. This package features thick Cu interconnects on a high-reliable insulating film for power semiconductor chip top contacts. Due to the conductor structure and contact technology, on-resistance and stray inductances are very low compared to state-of-the-art Al wire bonds. In addition, large area contacting improves the power cycling capability and surge current robustness significantly. These remark-able properties have been verified on several prototype modules where the manufacturing process has also been optimised in terms of cost-effectiveness, system integration and maturity for series production.