AC Cycling Testing of SiC MOSFET Power Module

This paper details the development of an accelerated AC cycling test bench for evaluating the aging mechanisms of SiC MOSFET power modules. Contrary to classical HTGS and DGS which only exercise gate source stresses the AC Cycler switched under high voltage and current. Operating for about 235 hours, the system maintained stable thermal conditions thanks to an integrated cooling system. Key precursors of aging, such as increases in threshold voltage and on-state resistance were identified using static characterization curve tracer before and after the test. Gate charge and Vdson were also measured on-line with specially developed gate drivers.

Metadaten
Author:	Tugce Yilmaz, Jorge Mari, Johann Asam, Michael Kirner, Andreas List, Lucia Fantauzzo, Norbert Seliger ORCID
DOI:	https://doi.org/10.30420/566541341
ISBN:	978-3-8007-6541-6
Parent Title (English):	Proccedings International exhibition and conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025)
Publisher:	VDE VERLAG GMBH
Place of publication:	Berlin
Document Type:	Conference Publication
Language:	English
Publication Year:	2025
Conference:	International exhibition and conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Conference 2025 (Nuremberg)
Release Date:	2025/05/14
Tag:	MOSFET; SiC; power cycling testing; power module
Page Number:	6
First Page:	2562
Last Page:	2567
Peer reviewed:	Ja
conference date:	6.-8.May 2025
faculties / departments:	Fakultät für Ingenieurwissenschaften
Dewey Decimal Classification:	6 Technik, Medizin, angewandte Wissenschaften / 60 Technik / 600 Technik, Technologie

Open Access