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Self-heating and kink effects in a-Si:H thin film transistors

  • We describe a new physics based, analytical DC model accounting for short channel effects for hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's). This model is based on the long channel device model. Two important short-channel phenomena, self-heating and kink effects, are analyzed in detail. For the self-heating effect, a thermal kinetic analysis is carried out and a physical model and an equivalent circuit are used to estimate the thermal resistance of the device. In deriving the analytical model for self-heating effect, a first order approximation and self-consistency are used to give an iteration-free model accurate for a temperature rise of up to 100/spl deg/C. In the modeling of the kink effects, a semi-empirical approach is used based on the physics involved. The combined model accurately reproduces the DC characteristics of a-Si:H TFT's with a gate length of the 4 /spl mu/m. Predictions for a-Si:H TFT's scaled down to 1 /spl mu/m are also provided. The model is suitable for use in device and circuit simulators.

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Metadaten
Author:L. Wang, T.A. Fjeldly, B. Iniguez, Holly C. Slade, M.S. Shur
URL:https://doi.org/10.1109/16.822285
Parent Title (English):IEEE Transactions on Electron Devices
Document Type:Article (peer reviewed)
Language:English
Publication Year:2000
Tag:Amorphous semiconductors
Volume:47
Issue:2
First Page:387
Last Page:397
Peer reviewed:Ja
faculties / departments:Fakultät für Holztechnik und Bau