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Improved JV-Analysis on CdTe Dot Cells by Controlled Series Resistance

  • CdS/CdTe thin film solar technology is one of the most promising concepts to accomplish high efficiencies and low costs in mass production. Further knowledge about electric parameters, such as serial resistances and recombination losses, is needed in order to improve in a systematic approach the module efficiency. The basic tool for device evaluation is the JV-measurement (current density – voltage) under standard test conditions. JVmeasurements result in rather direct determination of electric parameters, and detailed JV-analysis in indirect determination of some more relevant electric parameters. For thin film solar cells the usual 2-diode model and the responsible equation can be reduced to a 1-diode model due to significant recombination processes in the space charge region. However, the fit results suffer on imprecision of derived recombination currents (Jrec), and series resistance (Rs), due to their ambiguousness in fit routine. Direct and precise access of Rs by measurements fails for CdTe, due to its significant dependency on illumination levels. In this work we present a new method for precise Rs and Jrec determination of CdTe cells.

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Author:B. Hüttl, J.P. Heimfarth, Achim Schulze, S. Schelhase, M. Hafemeister, U. Weiler, M. Queck, T. Patzlaff, M. Bauer, F. Becker
Parent Title (English):Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition
Publisher:27th European Photovoltaic Solar Energy Conference and Exhibition
Document Type:Conference Proceeding
Language:English
Publication Year:2012
Tag:CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells