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Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips

  • We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs.

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Metadaten
Author:Eduard Dechant, Norbert SeligerORCiD, Ralph Kennel
URL:https://doi.org/10.1016/j.microrel.2019.06.064
Parent Title (English):Microelectronics Reliability
Document Type:Article (peer reviewed)
Language:English
Publication Year:2019
Tag:switching cell
Volume:100-101
First Page:113372
Peer reviewed:Ja
faculties / departments:Fakultät für Ingenieurwissenschaften