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A study of dielectric breakdown of a half-bridge switching cell with substrate integrated 650V GaN dies

  • This paper proposes an ultra-low inductance half-bridge switching cell with substrate integrated 650V GaN bare dies. A vertical parallel-plate waveguide structure with 100 μm layer thickness results in a commutation loop inductance of 0.5 nH resulting in a negligible drain-source voltage overshoot in the inductive load standard pulse test. On the other hand reliable circuit operation requires an assessment of the isolation strength of the thin dielectric layer in the main commutation loop, because critical high local electric fields might occur between the pads. Measurements of the dielectric breakdown voltage followed by a statistical failure analysis provide a characteristic life of 14.7 kV and a 10% quantile of 13.5kV in the Weibull fitted data. This characteristic life depends strongly on the ambient temperature and drops to 4.1kV at 125°C. Additionally, ageing tests show an increasing in dielectric breakdown voltage after 500h, 1000h and 2000h at 125°C high-temperature storage due to resin densification processes.

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Metadaten
Author:Eduard Dechant, Norbert SeligerORCiD, Ralph Kennel
URL:https://doi.org/10.1109/IWIPP.2019.8799104
Parent Title (English):2019 IEEE International Workshop on Integrated Power Packaging (IWIPP), Toulouse, France
Document Type:Conference Proceeding
Language:English
Publication Year:2019
Tag:half-bridge switching cell
faculties / departments:Fakultät für Ingenieurwissenschaften