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Impact of Circuit Carrier Technologies on MHz-switching of GaN Half-Bridge Circuits

  • Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650 V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype.

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Metadaten
Author:Norbert SeligerORCiD, Franz Stubenrauch, Christian Brendel, Doris Schmitt-Landsiedel
Parent Title (English):PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy, Nürnberg
Document Type:Conference Proceeding
Language:English
Publication Year:2017
Tag:GaN; Half-Bridge; MHz-switching; Substrate carrier technology
Page Number:9
First Page:1407
Last Page:1415
faculties / departments:Fakultät für Ingenieurwissenschaften