TY - CHAP A1 - Stubenrauch, Franz A1 - Wittmann, Josef A1 - Kiermayer, Alexander A1 - Seliger, Norbert A1 - Hagl, Rainer A1 - Schmitt-Landsiedel, Doris A1 - Kennel, Ralph T1 - FPGA-based High Dynamic Servo Drive Control with a 200kHz Gallium Nitride Inverter T2 - 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), Warsaw, Poland N2 - Increased productivity in industrial processes can be achieved by dynamic and accurate positioning of servo drives. Therefore, improvement of servo drive dynamics using latest technologies in the key components such as inverter, control system and position measuring device are investigated. Using Gallium Nitride (GaN) or Silicon Carbide (SiC) semiconductors for motor inverters enables energy efficient operation up to pulse width modulation (PWM) frequencies of 500 kHz. This allows motor filters with small component sizes. As a result, high motor efficiency, low torque ripple, high control bandwidth and almost ideal sinusoidal output voltages are achieved. Experiments on a 200 kHz Gallium Nitride inverter with sine wave motor filter show a current control loop bandwidth of 3.2 kHz and almost ideal sinusoidal phase voltages. The achieved bandwidths of the speed and position control loops are 318 Hz and 106 Hz, respectively. KW - Servo drive control KW - Gallium Nitride Inverter KW - electrical drive Y1 - 2017 UR - https://doi.org/10.23919/EPE17ECCEEurope.2017.8098997 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, Doris T1 - Design and Performance of a 200 kHz GaN Motor Inverter with Sine Wave Filter T2 - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg N2 - Gallium Nitride (GaN) semiconductor devices are promised to be a good alternative to Silicon (Si) semiconductors in future motor inverters for variable frequency drives (VFDs). They combine low on state resistance and low switching losses with a high blocking voltage capability. Compared to actual inverters based on insulated gate bipolar transistors (IGBTs) the pulse width modulation (PWM) frequency for efficient operation can be increased by a factor of 5 to 10, extending the PWM frequency range up to 500 kHz. This allows the use of motor filters with small component size. As a result, high motor efficiency, low torque ripple, high control bandwidth and nearly ideal sinusoidal output voltages are achieved. Therefore this inverters can be used for high speed spindle motors and dynamic servo drives. This paper focus on the design of a hybrid sine wave filter consisting of an analog and a digital part. The filter is optimized to achieve low power loss and high current control bandwidth. A 3-phase GaN motor inverter operating at 200 kHz PWM frequency at 400 V DC-link voltage verifies the system design. KW - motor inverter Y1 - 2020 ER - TY - CHAP A1 - Seliger, Norbert A1 - Stubenrauch, Franz A1 - Brendel, Christian A1 - Schmitt-Landsiedel, Doris T1 - Impact of Circuit Carrier Technologies on MHz-switching of GaN Half-Bridge Circuits T2 - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy, Nürnberg N2 - Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650 V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype. KW - GaN KW - Half-Bridge KW - MHz-switching KW - Substrate carrier technology Y1 - 2020 SP - 1407 EP - 1415 ER -