TY - JOUR A1 - Shur, M.S. A1 - Jacunski, M. A1 - Slade, Holly C. A1 - Hack, M. T1 - Analytical Models for Amorphous Silicon and Polysilicon TFTs for High Definition Display Technology JF - Journal of the Society for Information Display KW - Thin Film Transistors Y1 - 2020 VL - 3 IS - 4 SP - 223 ER - TY - JOUR A1 - Slade, Holly C. A1 - Shur, M.S. A1 - Deane, S.C. A1 - Hack, M. T1 - Below threshold conduction in a‐Si:H thin film transistors with and without a silicon nitride passivating layer JF - Applied Physics Letters N2 - We report temperature measurements of inverted staggered amorphous silicon thin film transistor subthreshold conductance for devices with and without a top silicon nitride passivating layer. Subthreshold conductance activation energies clearly show the different conductance paths in the active layer of these devices. Transistors with no top nitride layer conduct in the bulk amorphous silicon, whereas the devices with a top nitride layer conduct at the interface between the amorphous silicon and the top nitride (a ‘‘back’’ channel). Gate bias stressing and light soaking experiments uphold the existence of the back channel. We also present two‐dimensional simulations that support our interpretation of the experimental data. KW - Nitrides KW - Thin film transistors Y1 - 2020 UR - https://doi.org/10.1063/1.117739 VL - 69 IS - 17 SP - 2560 ER - TY - CHAP A1 - Slade, Holly C. A1 - Shur, M.S. A1 - Deane, S.C. A1 - Hack, M. T1 - Physics of Below Threshold Current Distribution in a-Si:H TFTs T2 - Materials Research Society, Proceedings, Amorphous Silicon Technology KW - Thin Film Transistors Y1 - 2020 N1 - Paper recieved a Graduate Research Student Award ER - TY - CHAP A1 - Slade, Holly C. A1 - Shur, M.S. A1 - Deane, S.C. A1 - Hack, M. T1 - Amorphous Silicon TFTs: Material Characterization, Device Operation, and Bias Stress Modeling T2 - The Electrochemical Society Extended Abstracts KW - Thin Film Transistors Y1 - 2020 VL - 95 IS - 2 SP - 861 ER - TY - CHAP A1 - Slade, Holly C. A1 - Shur, M.S. A1 - Hack, M. T1 - Temperature and Frequency Dependent Characteristics of Amorphous Silicon Thin Film Transistors T2 - Materials Research Society Proceedings, Amorphous Silicon Technology KW - Thin Film Transistors Y1 - 2020 VL - 377 SP - 725 ER - TY - CHAP A1 - Slade, Holly C. A1 - Globus, T. A1 - Gelmont, B. A1 - Shur, M.S. A1 - Hack, M. T1 - Effects of Stress on the Density of States in Amorphous Silicon TFTs T2 - Electrochemical Society Proceedings, Thin Film Transistors II KW - Thin Film Transistors Y1 - 2020 VL - 94 IS - 35 SP - 207 ER - TY - CHAP A1 - Globus, T. A1 - Slade, Holly C. A1 - Shur, M.S. A1 - Hack, M. T1 - Density of Deep Bandgap States in Amorphous Silicon from the Temperature Dependencies of Thin Film Transistor Current T2 - Materials Research Society Proceedings, Amorphous Silicon Technology KW - Thin Film Transistor Y1 - 2020 VL - 336 SP - 823 ER -