TY - JOUR A1 - Pecqueur, Sébastien A1 - Maltenberger, Anna A1 - Petrukhina, Marina A. A1 - Halik, Marcus A1 - Jaeger, Arndt A1 - Pentlehner, Dominik A1 - Schmid, Günter T1 - Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications JF - Angewandte Chemie International Edition N2 - Ten new efficient p‐dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics. KW - p-Dopants KW - Bismuth KW - OLED Y1 - 2016 IS - 55 PB - Wiley-VCH Verlag CY - Weinheim ER -