TY - CHAP A1 - Burian, E. A1 - Pogany, D. A1 - Lalinsky, T. A1 - Seliger, Norbert A1 - Gornik, E. T1 - Thermal Simulation and characterization of GaAs micromachined power sensor microsystems T2 - Eurosensors XI Y1 - 2023 SP - 949 EP - 952 ER - TY - JOUR A1 - Castellazzi, A. A1 - Kartal, V. A1 - Kraus, R. A1 - Seliger, Norbert A1 - Honsberg-Riedl, M. A1 - Schmitt-Landsiedel, D. T1 - Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET’s JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(03)00319-6 SN - 0026-2714 VL - 43 IS - 9 SP - 1877 EP - 1882 ER - TY - JOUR A1 - Castellazzi, A. A1 - Kraus, R. A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, D. T1 - Reliability analysis of power MOSFET’s with the help of compact models and circuit simulation JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(02)00198-1 SN - 0026-2714 VL - 42 IS - 9 SP - 1605 EP - 1610 ER - TY - CHAP A1 - Castellazzi, A. A1 - Kraus, R. A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, D. T1 - Influence of parasitic inductances on the switching behaviour of Power MOSFETs used in automotive applications T2 - Proc. 10th European Conference on Power Electronics and Applications, EPE Y1 - 2023 VL - 10 ER - TY - JOUR A1 - Coquery, G. A1 - Lefranc, G. A1 - Licht, T. A1 - Lallemand, R. A1 - Seliger, Norbert A1 - Berg, H. T1 - High temperature reliability on automotive power modules verified by power cycling tests up to 150°C JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(03)00318-4 SN - 0026-2714 VL - 43 IS - 9 SP - 1871 EP - 1876 ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - A study of dielectric breakdown of a half-bridge switching cell with substrate integrated 650V GaN dies T2 - 2019 IEEE International Workshop on Integrated Power Packaging (IWIPP), Toulouse, France N2 - This paper proposes an ultra-low inductance half-bridge switching cell with substrate integrated 650V GaN bare dies. A vertical parallel-plate waveguide structure with 100 μm layer thickness results in a commutation loop inductance of 0.5 nH resulting in a negligible drain-source voltage overshoot in the inductive load standard pulse test. On the other hand reliable circuit operation requires an assessment of the isolation strength of the thin dielectric layer in the main commutation loop, because critical high local electric fields might occur between the pads. Measurements of the dielectric breakdown voltage followed by a statistical failure analysis provide a characteristic life of 14.7 kV and a 10% quantile of 13.5kV in the Weibull fitted data. This characteristic life depends strongly on the ambient temperature and drops to 4.1kV at 125°C. Additionally, ageing tests show an increasing in dielectric breakdown voltage after 500h, 1000h and 2000h at 125°C high-temperature storage due to resin densification processes. KW - half-bridge switching cell Y1 - 2019 UR - https://doi.org/10.1109/IWIPP.2019.8799104 ER - TY - JOUR A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips JF - Microelectronics Reliability N2 - We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs. KW - switching cell Y1 - 2019 UR - https://doi.org/10.1016/j.microrel.2019.06.064 VL - 100-101 SP - 113372 ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Performance of a GaN Half Bridge Switching Cell with Substrate Integrated Chips T2 - PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg N2 - Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance gives superior switching characteristics compared to circuits with packaged dies. Simulation and experimental results of an inverse double pulse test confirm our expectations. This study further reveals additional benefits of the proposed technology in terms of mechanical stability and thermal interfacing to heat sinks compared to circuits with packaged dies. KW - half bridge switching cell Y1 - 2019 ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Design of a Low Multi-Loop Inductance Three Level Neutral Point Clamped Converter with GaN HEMTs T2 - IEEE Energy Conversion Congress and Exposition (ECCE) N2 - This work shows a numerical and experimental analysis of a Neutral-Point-Clamp (NPC) three level inverter featuring an ultra low inductance printed circuit board (PCB) design in consideration of the mutual inductive and capacitive couplings. The commutation loops in this design are found to be strongly dependent on the vertical thickness of the used prepregs and the core. For vertical thicknesses ≤ 100 μm capacitive coupling must be taken into account in the switching cell design. Experimental measurements of a test set-up with a total PCB thickness of 400 μm results in commutation loop inductances from 1.4 nH up to 3.1 nH. In this set-up, switching tests without external gate resistor showed only a maximum voltage overshoot of 7% at 800 V. Based on a numerical analysis of the NPC cell we propose a further switching performance improvement with significant smaller parasitic inductance due to the application of novel printed circuit technologies such as the integration of bare dies into the printed circuit board or polyimide as an interlayer dielectric material. KW - Neutral-Point-Clamp (NPC) three level inverter KW - GaN HEMT KW - low multiloop inductance Y1 - 2020 PB - IEEE ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Common Mode DGS EMI Filter Integrated into a GaN Half Bridge Switching Cell T2 - Procceedings International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2022) KW - EMI filter, DGS, GaN-HEMTs, Switching Cell Y1 - 2022 PB - Mesago ER -