TY - CHAP A1 - Seliger, Norbert A1 - Stubenrauch, Franz A1 - Brendel, Christian A1 - Schmitt-Landsiedel, Doris T1 - Impact of Circuit Carrier Technologies on MHz-switching of GaN Half-Bridge Circuits T2 - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy, Nürnberg N2 - Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650 V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype. KW - GaN KW - Half-Bridge KW - MHz-switching KW - Substrate carrier technology Y1 - 2020 SP - 1407 EP - 1415 ER -