TY - CHAP A1 - Weidner, Karl A1 - Kaspar, Michael A1 - Seliger, Norbert T1 - Innovative Leistungsmodule T2 - Produktion von Leiterplatten und Systemen (PLUS) KW - Leistungsmodule Y1 - 2011 SP - 1408 EP - 1412 ER - TY - CHAP A1 - Seliger, Norbert A1 - Dechant, Eduard A1 - Brendel, Christian A1 - Kennel, Ralph T1 - Reduction of Common Mode EMI noise in microstrip line based commutation paths designed for sub-nH loop inductance T2 - CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems, Berlin - Virtual Meeting N2 - We present a numerical and experimental design study for reducing conducted common mode noise for frequencies below 10MHz generated in switching cells comprising sub-nH commutation loops. Compared to conventional methods of adding external gate resistors our approach does not degrade efficiency. A parallel plate loop design (characterized by a minimum loop inductance and small board area usage) is found suboptimal in terms of conducted EMI compared to a micro-strip line loop geometry. The net ground impedance rather than the net ground inductance is found to mainly contribute to the observed EMI noise. KW - switching cell Y1 - 2020 ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Performance of a GaN Half Bridge Switching Cell with Substrate Integrated Chips T2 - PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg N2 - Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance gives superior switching characteristics compared to circuits with packaged dies. Simulation and experimental results of an inverse double pulse test confirm our expectations. This study further reveals additional benefits of the proposed technology in terms of mechanical stability and thermal interfacing to heat sinks compared to circuits with packaged dies. KW - half bridge switching cell Y1 - 2019 ER - TY - JOUR A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips JF - Microelectronics Reliability N2 - We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs. KW - switching cell Y1 - 2019 UR - https://doi.org/10.1016/j.microrel.2019.06.064 VL - 100-101 SP - 113372 ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - A study of dielectric breakdown of a half-bridge switching cell with substrate integrated 650V GaN dies T2 - 2019 IEEE International Workshop on Integrated Power Packaging (IWIPP), Toulouse, France N2 - This paper proposes an ultra-low inductance half-bridge switching cell with substrate integrated 650V GaN bare dies. A vertical parallel-plate waveguide structure with 100 μm layer thickness results in a commutation loop inductance of 0.5 nH resulting in a negligible drain-source voltage overshoot in the inductive load standard pulse test. On the other hand reliable circuit operation requires an assessment of the isolation strength of the thin dielectric layer in the main commutation loop, because critical high local electric fields might occur between the pads. Measurements of the dielectric breakdown voltage followed by a statistical failure analysis provide a characteristic life of 14.7 kV and a 10% quantile of 13.5kV in the Weibull fitted data. This characteristic life depends strongly on the ambient temperature and drops to 4.1kV at 125°C. Additionally, ageing tests show an increasing in dielectric breakdown voltage after 500h, 1000h and 2000h at 125°C high-temperature storage due to resin densification processes. KW - half-bridge switching cell Y1 - 2019 UR - https://doi.org/10.1109/IWIPP.2019.8799104 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, Doris T1 - Design and Performance of a 200 kHz GaN Motor Inverter with Sine Wave Filter T2 - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg N2 - Gallium Nitride (GaN) semiconductor devices are promised to be a good alternative to Silicon (Si) semiconductors in future motor inverters for variable frequency drives (VFDs). They combine low on state resistance and low switching losses with a high blocking voltage capability. Compared to actual inverters based on insulated gate bipolar transistors (IGBTs) the pulse width modulation (PWM) frequency for efficient operation can be increased by a factor of 5 to 10, extending the PWM frequency range up to 500 kHz. This allows the use of motor filters with small component size. As a result, high motor efficiency, low torque ripple, high control bandwidth and nearly ideal sinusoidal output voltages are achieved. Therefore this inverters can be used for high speed spindle motors and dynamic servo drives. This paper focus on the design of a hybrid sine wave filter consisting of an analog and a digital part. The filter is optimized to achieve low power loss and high current control bandwidth. A 3-phase GaN motor inverter operating at 200 kHz PWM frequency at 400 V DC-link voltage verifies the system design. KW - motor inverter Y1 - 2020 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, Doris T1 - A Low Impedance Drive Circuit to Suppress the Spurious Turn-On in High Speed Wide Band-Gap Semiconductor Halfbridges T2 - PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg N2 - A gate drive circuit for gallium nitride (GaN) enhancement mode (e-mode) transistors is presented, which avoids parasitic turn-on of the power devices in the halfbridge configuration. New e-mode GaN devices turn on at very low threshold voltages between 1V and 2V. This makes the transistors highly sensitive to spurious turn-on and thus reduces the required safety margin of the gate drive signals. To avoid this parasitic turn-on, a very low gate loop impedance is required. This prevents the halfbridge against bridge shorts during the switching events and guarantees stable gate drive control with increased switching efficiency. The new gate drive circuit is developed in a SPICE simulation environment and verified in a prototype setup by a double pulse test. The simulation matches very well with the experimental result and demonstrates the suppression of parasitic semiconductor turn-on with the proposed gate drive. Furthermore the dissipated switching energy is reduced, compared to a standard gate drive circuit. High DCDC converter efficiency of 98.67% at 1kW output power is achieved by using the driving circuit for a buck converter prototype with 200kHz switching frequency. KW - drive circuit Y1 - 2020 ER - TY - CHAP A1 - Seliger, Norbert A1 - Stubenrauch, Franz A1 - Brendel, Christian A1 - Schmitt-Landsiedel, Doris T1 - Impact of Circuit Carrier Technologies on MHz-switching of GaN Half-Bridge Circuits T2 - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy, Nürnberg N2 - Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650 V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype. KW - GaN KW - Half-Bridge KW - MHz-switching KW - Substrate carrier technology Y1 - 2020 SP - 1407 EP - 1415 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, Doris T1 - A Simplified SPICE Model for Fast Parametric Optimization of High Voltage Power Electronic Circuits in the Megahertz Range T2 - CIPS 2016; 9th International Conference on Integrated Power Electronics Systems, Nürnberg N2 - An accurate SPICE model is proposed in this paper to calculate the power losses of high voltage converter systems. This supports power circuit optimization in the very first design stage. The parasitic package inductances and the nonlinear voltage dependent semiconductor capacitances are taken into account. In addition the high frequency behavior of the power inductor is investigated. A detailed loss breakdown is done to analyze the main sources of power loss and their physical reasons. The simulation results of the converter waveforms and of its efficiency match very well to the experimental results. The prototype boost converter shows a top efficiency greater than 98.3 % at a switching frequency of 1 MHz and an output voltage of 400 V at the maximum output power of 1 kW. KW - SPICE model Y1 - 2016 ER - TY - CHAP A1 - Seliger, Norbert A1 - Stubenrauch, Franz A1 - Schmitt-Landsiedel, Doris T1 - A Parametric Layout Study of Radiated Emission from High-Frequency Half-Bridge Switching Cells T2 - CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems, Nürnberg N2 - We present a numerical modeling study of radiated emission from half-bridge switching cells based on the method of moments (MoM). A low loop inductance cell design enables high-speed switching of power semiconductors which is demonstrated on a prototype circuit. The layout is further optimized for low radiated emission by variation of the heat sink placement. This is achieved by the heat sink attached to the phase terminal. The performance of the structure in terms of loop impedance, electric field radiation and sensitivity to cable attachments are numerically studied. Emission peaks arising from loop resonances can be reduced by over 20 dB with damping elements in the switching cell. The improved EMI performance of the proposed structure is attributed to decoupling of the loop current from the heat sink structure. KW - half-bridge switching cells Y1 - 2016 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Seliger, Norbert A1 - Schustek, Maximilian A1 - Lebedev, Alexey A1 - Schmitt-Landsiedel, Doris T1 - A 13.56MHz class e power amplifier for inductively coupled DC supply with 95% power added efficiency (PAE) T2 - 2015 International EURASIP Workshop on RFID Technology (EURFID), Rosenheim N2 - Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE). KW - Power generation KW - Inductors KW - Power amplifiers KW - Coils KW - Gallium nitride KW - Voltage measurement KW - Logic gates Y1 - 2015 UR - https://doi.org/10.1109/EURFID.2015.7332390 SP - 87 EP - 93 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Wittmann, Josef A1 - Kiermayer, Alexander A1 - Seliger, Norbert A1 - Hagl, Rainer A1 - Schmitt-Landsiedel, Doris A1 - Kennel, Ralph T1 - FPGA-based High Dynamic Servo Drive Control with a 200kHz Gallium Nitride Inverter T2 - 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), Warsaw, Poland N2 - Increased productivity in industrial processes can be achieved by dynamic and accurate positioning of servo drives. Therefore, improvement of servo drive dynamics using latest technologies in the key components such as inverter, control system and position measuring device are investigated. Using Gallium Nitride (GaN) or Silicon Carbide (SiC) semiconductors for motor inverters enables energy efficient operation up to pulse width modulation (PWM) frequencies of 500 kHz. This allows motor filters with small component sizes. As a result, high motor efficiency, low torque ripple, high control bandwidth and almost ideal sinusoidal output voltages are achieved. Experiments on a 200 kHz Gallium Nitride inverter with sine wave motor filter show a current control loop bandwidth of 3.2 kHz and almost ideal sinusoidal phase voltages. The achieved bandwidths of the speed and position control loops are 318 Hz and 106 Hz, respectively. KW - Servo drive control KW - Gallium Nitride Inverter KW - electrical drive Y1 - 2017 UR - https://doi.org/10.23919/EPE17ECCEEurope.2017.8098997 ER -