TY - CHAP A1 - Seliger, Norbert A1 - Habas, P. A1 - Gornik, E. ED - de Graaf, H. C. ED - van Kranenburg, H. T1 - Modeling and measurements of backside laserprobe signals in MOSFETs T2 - European Conference on Solid-State Device Research (ESSDERC' 95) Y1 - 2023 UR - https://ieeexplore.ieee.org/document/5436126 SP - 773 EP - 776 ER - TY - CHAP A1 - Seliger, Norbert A1 - Habas, P. A1 - Gornik, E. ED - Baccarani, G. ED - Rudan, M. T1 - Time Domain Characterization of lattice heating in power VDMOSFETs by means of an interferometric laserprobe technique T2 - Proceedings of the 26th European Solid State Device Research Conference (ESSDERC' 96) Y1 - 2023 UR - https://ieeexplore.ieee.org/document/5435968 SP - 847 EP - 850 ER - TY - CHAP A1 - Pogany, D. A1 - Seliger, Norbert A1 - Lalinsky, T. A1 - Kuzmik, J. A1 - Habas, P. A1 - Hrkut, P. A1 - Gornik, E. T1 - Study of thermal effects in GaAs micromachined power sensor microsystems by an optical interferometer technique T2 - International Workshop on Thermal Investigation of ICs and Systems (THERMINIC' 96) Y1 - 2023 SP - 185 EP - 190 ER - TY - CHAP A1 - Pogany, D. A1 - Lalinsky, T. A1 - Seliger, Norbert A1 - Kuzmik, J. A1 - Habas, P. A1 - Hrkut, P. A1 - Gornik, E. T1 - Power Sensor Microsystems Characterization using a contactless optical laser method T2 - International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM' 96) Y1 - 2023 SP - 201 EP - 204 ER - TY - CHAP A1 - Seliger, Norbert A1 - Habas, P. A1 - Koeck, A. A1 - Pogany, D. A1 - Gornik, E. T1 - Backside laserprobing of transient heating in power VDMOSFETs T2 - International Seminar on Power Semiconductors (ISPS) Y1 - 2023 SP - 115 EP - 122 ER - TY - JOUR A1 - Seliger, Norbert A1 - Habaš, Predrag A1 - Gornik, Erich T1 - A study of backside laser-probe signals in MOSFETs JF - Microelectronic Engineering Y1 - 2023 U6 - https://doi.org/10.1016/0167-9317(95)00329-0 VL - 31 IS - 1-4 SP - 87 EP - 94 ER - TY - CHAP A1 - Pogany, D. A1 - Fuerboeck, C. A1 - Seliger, Norbert A1 - Habas, P. A1 - Gornik, E. A1 - Kubicek, S. A1 - Decoutere, S. ED - Grünbacher, H. T1 - Optical Testing of submicron-technology MOSFETs and bipolar transistors T2 - European Solid-State Device Research Conference (ESSDERC' 97) Y1 - 2023 UR - https://ieeexplore.ieee.org/document/1503373 SP - 372 EP - 375 ER - TY - CHAP A1 - Seliger, Norbert A1 - Fuerboeck, C. A1 - Habas, P. A1 - Pogany, D. A1 - Gornik, E. T1 - Backside-Laserprober Technique for Characterisation of Semiconductor Power Devices T2 - Proceedings of the Seminar Basics and Technology of Electronic Devices Y1 - 2023 SP - 143 EP - 147 ER - TY - CHAP A1 - Seliger, Norbert A1 - Pogany, D. A1 - Fuerboeck, C. A1 - Habas, P. A1 - Gornik, E. A1 - Stoisiek, M. ED - Grünbacher, H. T1 - A study of temperature distribution in SOI-smart power devices in transient conditions by optical interferometry T2 - 27th European Solid-State Device Research Conference (ESSDERC' 97) Y1 - 2023 UR - https://ieeexplore.ieee.org/document/1503408 SP - 372 EP - 375 ER - TY - CHAP A1 - Fuerboeck, C. A1 - Thalhammer, R. A1 - Seliger, Norbert A1 - Pogany, D. A1 - Deboy, G. A1 - Wachutka, G. A1 - Gornik, E. T1 - Lokale Temperaturbestimmung in Insulated Gate Bipolar Transistoren (IGBTs) mittels Lasersondentechnik T2 - Beiträge der Informationstagung ME 97 OVE-Schriftenreihe; Nr. 14 (ISBN 3-85133-010-2) Y1 - 2023 UR - https://d-nb.info/960109242/04 VL - 14 SP - 117 EP - 122 ER - TY - JOUR A1 - Seliger, Norbert A1 - Habas, P. A1 - Pogany, D. A1 - Gornik, E. T1 - Time-Resolved Analysis of Self-Heating in Power VDMOSFETs Using Backside-Laserprobing JF - Solid-State Electronics Y1 - 2023 U6 - https://doi.org/10.1016/S0038-1101(97)00131-7 VL - 41 IS - 9 SP - 1285 EP - 1292 ER - TY - JOUR A1 - Seliger, Norbert A1 - Pogany, D. A1 - Fuerboeck, C. A1 - Habas, P. A1 - Gornik, E. T1 - A laser beam method for evaluation of thermal time constant in smart power devices JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(97)00149-2 VL - 37 IS - 10/11 SP - 1727 EP - 1730 ER - TY - CHAP A1 - Burian, E. A1 - Pogany, D. A1 - Lalinsky, T. A1 - Seliger, Norbert A1 - Gornik, E. T1 - Thermal Simulation and characterization of GaAs micromachined power sensor microsystems T2 - Eurosensors XI Y1 - 2023 SP - 949 EP - 952 ER - TY - JOUR A1 - Pogany, D. A1 - Seliger, Norbert A1 - Lalinsky, T. A1 - Kuzmik, J. A1 - Habas, P. A1 - Hrkut, P. A1 - Gornik, E. T1 - Study of Thermal Effects in GaAs Micromachined Power Sensor Microsystems by an Optical Interferometer Technique JF - Microelectronics Journal Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2692(97)00057-8 VL - 29 IS - 4-5 SP - 191 EP - 198 ER - TY - JOUR A1 - Seliger, Norbert A1 - Gornik, E. A1 - Pogany, D. A1 - Fuerboeck, C. A1 - Habas, P. A1 - Thalhammer, R. A1 - Stoisiek, M. T1 - Characterisation of Semiconductor Devices by Infrared Laser Interferometry JF - E&I Elektrotechnik und Informationstechnik, Sonderheft Trends in der Mikrotechnik Y1 - 2023 U6 - https://doi.org/10.1007/BF03159611 IS - 7-8 SP - 403 EP - 403 ER - TY - JOUR A1 - Pogany, D. A1 - Seliger, Norbert A1 - Gornik, E. A1 - Stoisiek, M. A1 - Lalinsky, T. T1 - Analysis of the temperature evolution from the time resolved thermo-optical interferometric measurements with few Fabry-Perot peaks JF - Journal of Applied Physics Y1 - 2023 U6 - https://doi.org/10.1063/1.368674 VL - 84 IS - 8 SP - 4495 EP - 4501 ER - TY - JOUR A1 - Fuerboeck, C. A1 - Seliger, Norbert A1 - Pogany, D. A1 - Litzenberger, M. A1 - Gornik, E. A1 - Stecher, M. A1 - Gosser, H. A1 - Werner, W. T1 - Backside laserprober characterization of thermal effects during high current stress in smart power ESD protection devices JF - International Electron Devices Meeting (IEDM ’98) Technical Digest Y1 - 2023 U6 - https://doi.org/10.1109/IEDM.1998.746451 SP - 691 EP - 694 ER - TY - CHAP A1 - Thalhammer, R. A1 - Fuerboeck, C. A1 - Seliger, Norbert A1 - Deboy, G. A1 - Gornik, E. A1 - Wachutka, G. T1 - Internal characterization of IGBTs using the backside laser probing technique - Interpretation of measurement by numerical simulation T2 - Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs (Proc. of ISPSD) Y1 - 2023 U6 - https://doi.org/10.1109/ISPSD.1998.702668 SP - 199 EP - 202 ER - TY - CHAP A1 - Thalhammer, R. A1 - Fuerboeck, C. A1 - Seliger, Norbert A1 - Gornik, E. A1 - Wachutka, G. T1 - Validation and calibration of Electrothermal Device Models Using Infrared Laser Probing Techniques T2 - Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems (Proc. of MSM’98) Y1 - 2023 UR - https://briefs.techconnect.org/wp-content/volumes/MSM98/pdf/T3205.pdf SP - 213 EP - 217 ER - TY - JOUR A1 - Fürböck, C. A1 - Litzenberger, M. A1 - Pogany, D. A1 - Gornik, E. A1 - Seliger, Norbert A1 - Müller-Lynch, T. A1 - Stecher, M. A1 - Goßner, H. A1 - Werner, W. T1 - Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(99)00124-9 SN - 0026-2714 VL - 39 IS - 6 SP - 925 EP - 930 ER - TY - JOUR A1 - Pogany, D. A1 - Seliger, Norbert A1 - Litzenberger, M. A1 - Gossner, H. A1 - Stecher, M. A1 - Müller-Lynch, T. A1 - Werner, W. A1 - Gornik, E. T1 - Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(99)00162-6 SN - 0026-2714 VL - 39 IS - 6 SP - 1143 EP - 1148 ER - TY - CHAP A1 - Fürböck, C. A1 - Pogany, D. A1 - Litzenberger, M. A1 - Gornik, E. A1 - Seliger, Norbert A1 - Gossner, H. A1 - Müller-Lynch, T. A1 - Stecher, M. A1 - Werner, W. T1 - Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices T2 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings KW - ESD KW - smart power device Y1 - 2023 U6 - https://doi.org/10.1109/EOSESD.1999.819067 SP - 241 EP - 250 PB - IEEE ER - TY - CHAP A1 - Fürböck, C. A1 - Thalhammer, R. A1 - Litzenberger, M. A1 - Seliger, Norbert A1 - Pogany, D. A1 - Gornik, E. A1 - Wachutka, G. T1 - A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices T2 - 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD’99 Proceedings KW - backside laserprobing Y1 - 2023 U6 - https://doi.org/10.1109/ISPSD.1999.764095 SP - 193 EP - 196 PB - IEEE ER - TY - CHAP A1 - Fürböck, C. A1 - Thalhammer, R. A1 - Litzenberger, M. A1 - Seliger, Norbert A1 - Pogany, D. A1 - Gornik, E. A1 - Wachutka, G. T1 - Internal Characterisation of IGBTs Using the Backside Laserprober Technique T2 - Jahrestagung der GMe, Bad Hofgastein Tagungsband 1999 KW - IGBT Y1 - 1999 SN - 3-901678-04-8 PB - Gesellschaft für Mikroelektronik (GMe) ER - TY - JOUR A1 - Ramminger, S. A1 - Seliger, Norbert A1 - Wachutka, G. T1 - Reliability model for Al wire bonds subjected to heel crack failures JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(00)00139-6 SN - 0026-2714 VL - 40 IS - 8 SP - 1521 EP - 1525 ER - TY - JOUR A1 - Fürböck, C. A1 - Pogany, D. A1 - Litzenberger, M. A1 - Gornik, E. A1 - Seliger, Norbert A1 - Gossner, H. A1 - Müller-Lynch, T. A1 - Stecher, M. A1 - Werner, W. T1 - Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices JF - Journal of Electrostatics KW - ESD KW - smart power device Y1 - 2023 VL - 49 SP - 195 EP - 213 ER - TY - CHAP A1 - Seliger, Norbert A1 - Ramminger, S. A1 - Franke, T. A1 - Wachutka, G. T1 - A study of heel crack failures in wire bonds under mechanical cycling T2 - Proceedings of Micromat 2000 KW - wire bond KW - reliability KW - heel crack Y1 - 2023 ER - TY - CHAP A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - A volumetric optimization of a low pass filter T2 - Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248) KW - low pass filter Y1 - 2023 U6 - https://doi.org/10.1109/IAS.2001.955934 SP - 2224 EP - 2231 PB - IEEE ER - TY - CHAP A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - High density packaging of the passive components in an automotive DC/DC converter T2 - 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289) KW - Automotive engineering KW - Cooling KW - DC-DC power converters KW - Filters KW - Inductors KW - Packaging KW - Resistance heating KW - Temperature KW - Thermal conductivity KW - Thermal resistance Y1 - 2023 U6 - https://doi.org/10.1109/PSEC.2002.1022545 VL - 2 SP - 761 EP - 767 ER - TY - CHAP A1 - Wolfgang, E A1 - Seliger, Norbert A1 - Lugert, G A1 - Riepl, T T1 - High-temperature power electronics: challenges and opportunities T2 - Proceedings of the 2nd International Conference on Integrated Power Systems (CIPS) Y1 - 2023 SP - 43 EP - 51 ER - TY - JOUR A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - A volumetric optimization of a low-pass filter JF - IEEE Transactions on Industry Applications KW - DC-DC power converters KW - Electronic packaging thermal management KW - Industry Applications Society KW - Integrated circuit interconnections KW - Low pass filters KW - Magnetic separation KW - Manufacturing KW - Power electronics KW - Power system interconnection Y1 - 2023 U6 - https://doi.org/10.1109/TIA.2002.802996 SN - 1939-9367 VL - 38 IS - 5 SP - 1432 EP - 1440 ER - TY - JOUR A1 - Castellazzi, A. A1 - Kraus, R. A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, D. T1 - Reliability analysis of power MOSFET’s with the help of compact models and circuit simulation JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(02)00198-1 SN - 0026-2714 VL - 42 IS - 9 SP - 1605 EP - 1610 ER - TY - JOUR A1 - Seliger, Norbert A1 - Wolfgang, E. A1 - Lefranc, G. A1 - Berg, H. A1 - Licht, T. T1 - Reliable power electronics for automotive applications JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(02)00197-X SN - 0026-2714 VL - 42 IS - 9-11 SP - 1597 EP - 1604 ER - TY - CHAP A1 - Gerstenmaier, Y.C. A1 - Wachutka, G. A1 - Seliger, Norbert T1 - Efficient calculation of transient temperature fields responding to fast changing heatsources over long duration in high frequency DC/DC converter T2 - Proceedings of THERMINIC KW - DC/DC converter KW - thermal management Y1 - 2023 SP - 297 EP - 302 ER - TY - CHAP A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - A very high density, heatsink mounted inductor for automotive applications T2 - Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) KW - inductor Y1 - 2023 U6 - https://doi.org/10.1109/IAS.2002.1042672 SP - 948 EP - 954 PB - IEEE ER - TY - CHAP A1 - Wolfgang, E. A1 - Lefranc, G. A1 - Seliger, Norbert A1 - Berg, H. A1 - Licht, T. T1 - Zuverlässige Leistungselektronik für die Automobiltechnik T2 - ETG-Tagung Bauelemente der Leistungselektronik und ihre Anwendungen KW - Power electronics Y1 - 2023 PB - ETG CY - Bad Nauheim ER - TY - CHAP A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - A high power density DC/DC converter for automotive applications T2 - SAUPEC 2002 Proceedings of the Eleventh Southern African Universities Power Engineering Conference KW - DC/DC converter Y1 - 2023 PB - IEEE ER - TY - CHAP A1 - Röhrich, A. A1 - Hirsch, H. A1 - Seliger, Norbert T1 - Built-in EMC in der Aufbau- und Verbindungstechnik am Beispiel des integrierten Startergenerators T2 - Proceedings Electronic & Communications in Traffic Systems (ECT'02) KW - EMC Y1 - 2023 ER - TY - CHAP A1 - Röhrich, A. A1 - Hirsch, H. A1 - Seliger, Norbert T1 - EMC modeling of a compact packaging technology of a crankshaft starter generator T2 - International Conference of Electromagnetic Compatibility (ICEMC 2002) KW - EMC modeling Y1 - 2023 ER - TY - CHAP A1 - Seliger, Norbert A1 - Rackles, J. A1 - Schwarzbauer, H. A1 - Wolfgang, E. A1 - Bolz, S. ED - Peier, D. ED - Hirsch, H. T1 - Kompakte und hochzuverlaessige Aufbau- und Verbindungstechnik fuer leistungselektronische Systeme am Beispiel Starter Generator T2 - Proceedings ECT 2002: Electronics and communications in traffic systems. N2 - A compact and high-reliable converter design for an Integrated Starter Generator is presented. The concept is based on integration of the power switches with both the cooling system and the DC link capacitor, which optimizes the thermal management and minimizes inductive and conductive losses. The materials and joining technologies are selected in such a way that the converter can be operated up to 125 C ambient temperature. Therefore, the water cooling system of the combustion engine can directly be used. The paper further reports on circuit simulation results verifying the converter design and on first electrical measurements obtained on a functional prototype operating under normal load conditions (6kW rated power). KW - DC/DC converter Y1 - 2002 SN - 3-7785-2885-8 SP - 120 EP - 128 PB - MESAGO Messe- und Kongress-GmbH CY - Stuttgart (Germany) ER - TY - CHAP A1 - Seliger, Norbert A1 - Rackles, J. A1 - Schwarzbauer, H. A1 - Kiffe, W. A1 - Bolz, S. T1 - Compact and robust power electronics packaging and interconnection technology for an Integrated Starter Generator T2 - Optimization of the Power Train in Vehicles by Using the Integrated Starter Generator (ISG) KW - power electronics packaging Y1 - 2002 SN - 9783816920779 SP - 248 EP - 255 PB - expert verlag GmbH ER - TY - JOUR A1 - Castellazzi, A. A1 - Kartal, V. A1 - Kraus, R. A1 - Seliger, Norbert A1 - Honsberg-Riedl, M. A1 - Schmitt-Landsiedel, D. T1 - Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET’s JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(03)00319-6 SN - 0026-2714 VL - 43 IS - 9 SP - 1877 EP - 1882 ER - TY - JOUR A1 - Coquery, G. A1 - Lefranc, G. A1 - Licht, T. A1 - Lallemand, R. A1 - Seliger, Norbert A1 - Berg, H. T1 - High temperature reliability on automotive power modules verified by power cycling tests up to 150°C JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(03)00318-4 SN - 0026-2714 VL - 43 IS - 9 SP - 1871 EP - 1876 ER - TY - JOUR A1 - Kanert, W. A1 - Dettmer, H. A1 - Plikat, B. A1 - Seliger, Norbert T1 - Reliability aspects of semiconductor devices in high temperature applications JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(03)00313-5 SN - 0026-2714 VL - 43 IS - 9 SP - 1839 EP - 1846 ER - TY - CHAP A1 - Oila, K. A1 - Ciappa, M. A1 - Seliger, Norbert A1 - Fichtner, W. T1 - Thermal Modeling, Simulation and Characterization of a High-Temperature Converter for Automotive Applications T2 - Proc. 10th European Conference on Power Electronics and Applications, EPE Y1 - 2023 VL - 10 ER - TY - CHAP A1 - Castellazzi, A. A1 - Kraus, R. A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, D. T1 - Influence of parasitic inductances on the switching behaviour of Power MOSFETs used in automotive applications T2 - Proc. 10th European Conference on Power Electronics and Applications, EPE Y1 - 2023 VL - 10 ER - TY - CHAP A1 - Oila, Kari A1 - Ciappa, Mauro A1 - Seliger, Norbert A1 - Fichtner, Wolfgang T1 - Computer assisted thermal design of an integrated starter generator and model assessment under realistic operating conditions T2 - International Workshop on Thermal Investigation of ICs and Systems (THERMINIC) Y1 - 2023 SN - 978-2-84813-020-0 SP - 107 EP - 112 ER - TY - CHAP A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - High temperature, high power density packaging for automotive applications T2 - IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03. N2 - The automotive industry is pushing power electronic packaging to higher operating and heatsink temperatures while still requiring very high power densities due to limited space. Currently, the power electronics that is implemented within the engine compartment of the vehicle must operate with heatsink temperatures of approximately 85/spl deg/C and this temperature can be expected to increase to 125/spl deg/C in the near future. The high temperature operation of the power electronic structure is fundamentally limited by the employed materials maximum temperatures. A packaging concept is introduced that describes a structure realisation that enables the materials to operate at high ambient temperatures without exceeding their individual maximum temperatures. This in turn allows the complete power electronic structure to operate at a higher system temperature. In this paper, the packaging concept that can be used to meet these difficult requirements of high temperature and high power-density is introduced, discussed and implemented. Two case studies are considered and implemented to illustrate the packaging concept. KW - high temperature electronic packaging Y1 - 2003 U6 - https://doi.org/10.1109/PESC.2003.1218329 SP - 425 EP - 430 PB - IEEE ER - TY - CHAP A1 - Rackles, J. A1 - Seliger, Norbert ED - Graf, A. T1 - Optimization of DC-Link Capacitors in an Integrated Starter Generator Unit T2 - The New Automotive 42V Power Net KW - capacitor Y1 - 2003 SN - 978-3-8169-1992-6 PB - expert verlag ER - TY - CHAP A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - An improved 3D integrated DC/DC converter for high temperature environments T2 - IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551) KW - DC/DC converter Y1 - 2023 SP - 2779 EP - 2785 PB - IEEE ER - TY - CHAP A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - Interleaving optimization in synchronous rectified DC/DC converters T2 - IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551) KW - DC/DC converter Y1 - 2023 SP - 4655 EP - 4661 PB - IEEE ER - TY - JOUR A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - A high-density heat-sink-mounted inductor for automotive applications JF - IEEE Transactions on Industry Applications KW - inductor Y1 - 2023 VL - 40 IS - 4 SP - 1031 EP - 1038 PB - IEEE ER - TY - CHAP A1 - Röhrich, A. A1 - Hirsch, H. A1 - Seliger, Norbert T1 - EMC-optimised design of a converter power stage by reduction of surface currents T2 - IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551) KW - EMC Y1 - 2023 SP - 82 EP - 85 PB - IEEE ER - TY - CHAP A1 - Hirsch, H. A1 - Röhrich, A. A1 - Seliger, Norbert T1 - EMV-optimierter Entwurf durch gezielte Reduktion von Oberflächenströmen T2 - 12. Internationale Fachmesse und Kongress für Elektromagnetische Verträglichkeit KW - EMC Y1 - 2023 SN - 3-8007-2810-9 SP - 689 EP - 696 PB - VDE-Verlag GmbH CY - Düsseldorf ER - TY - JOUR A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Seliger, Norbert A1 - Hofsajer, I.W. T1 - Integral 3-D thermal, electrical and mechanical design of an automotive DC/DC converter JF - IEEE Transactions on Power Electronics KW - DC/DC converter Y1 - 2023 VL - 20 IS - 3 SP - 566 EP - 575 PB - IEEE ER - TY - JOUR A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Seliger, Norbert A1 - Hofsajer, I.W. T1 - High density packaging of the passive components in an automotive DC/DC converter JF - IEEE Transactions on Power Electronics KW - DC/DC converter Y1 - 2023 VL - 20 IS - 2 SP - 268 EP - 275 PB - IEEE ER - TY - CHAP A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Hofsajer, I.W. A1 - Seliger, Norbert T1 - Integral design of a high power density DC/DC converter for harsh environments T2 - European Conference on Power Electronics and Applications KW - DC/DC converter Y1 - 2023 PB - IEEE ER - TY - CHAP A1 - Gerber, M. A1 - Ferreira, J.A. A1 - Seliger, Norbert A1 - Hofsajer, I.W. T1 - Design and evaluation of an automotive integrated system module T2 - Conference Record of the 2005 Industry Applications Conference KW - power module Y1 - 2023 SP - 1144 EP - 1151 PB - IEEE ER - TY - JOUR A1 - Gerber, M. A1 - Seliger, Norbert A1 - Ferreira, J. A. A1 - Hofsajer, I. W. T1 - Magnetic component miniaturisation for application in power electronic modules JF - 4th International Conference on Integrated Power Systems KW - Windings KW - Heating Y1 - 2023 UR - https://ieeexplore.ieee.org/document/5758070 SP - 1 EP - 6 ER - TY - CHAP A1 - Renken, F. A1 - Ehbauer, G. A1 - Karrer, V. A1 - Knorr, R. A1 - Ramminger, S. A1 - Seliger, Norbert A1 - Wolfgang, E. T1 - Reliability of high temperature inverters for HEV T2 - Proceedings Power Conversion Conference KW - HEV KW - Reliability KW - High-Temperature Electronics Y1 - 2023 U6 - https://doi.org/10.1109/PCCON.2007.373022 SP - 563 EP - 568 PB - IEEE CY - Nagoya ER - TY - CHAP A1 - Weidner, Karl A1 - Kaspar, Michael A1 - Seliger, Norbert T1 - Innovative Leistungsmodule T2 - Produktion von Leiterplatten und Systemen (PLUS) KW - Leistungsmodule Y1 - 2011 SP - 1408 EP - 1412 ER - TY - CHAP A1 - Weidner, Karl A1 - Kaspar, Michael A1 - Seliger, Norbert T1 - Planar Interconnect Technology for Power Module System Integration T2 - 7th International Conference on Integrated Power Electronics Systems (CIPS) N2 - The recent developments in power semiconductor devices and increasing demands on reliability as well as on operation performance require innovative package technologies. Such a novel package technique based on a Planar Interconnect Technology (SiPLIT®) for power modules is introduced in this work. This package features thick Cu interconnects on a high-reliable insulating film for power semiconductor chip top contacts. Due to the conductor structure and contact technology, on-resistance and stray inductances are very low compared to state-of-the-art Al wire bonds. In addition, large area contacting improves the power cycling capability and surge current robustness significantly. These remark-able properties have been verified on several prototype modules where the manufacturing process has also been optimised in terms of cost-effectiveness, system integration and maturity for series production. KW - planar interconnect technology KW - power module system integration KW - power semiconductor devices KW - reliability KW - innovative package KW - SiPLIT KW - power cycling capability Y1 - 2012 SP - 13.1 PB - VDE-VERLAG GMBH ER - TY - CHAP A1 - Seliger, Norbert T1 - Zuverlässigkeit mechatronischer Systeme: Bewertung der Lebensdauer der Leistungselektronik T2 - Internationales Forum Mechatronik KW - Lebensdauer Kondensatoren KW - Zuverlässigkeit KW - PFC KW - Reliability Y1 - 2012 ER - TY - CHAP A1 - Seliger, Norbert T1 - Probabilistic model based analysis of electrolytic capacitor ageing and failures in a single-phase power factor correction circuit T2 - 8th International Conference on Integrated Power Electronics Systems (CIPS) N2 - Wear-out failures of electrolytic capacitors in single phase power factor correction circuits are investigated in this study. A probabilistic model based approach for temperature driven capacitor degradation is chosen to analyse the probability of failure of the output capacitor bank. Different design strategies are proposed and evaluated in terms of reliability. Parametric variation of capacitor bank designs provides influential effects on system volume, cost and reliability which is modeled for a sample size of 1000 power supply units. KW - wear-out failure electrolytic capacitor KW - active PFC Y1 - 2014 PB - VDE-VERLAG GMBH ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Seliger, Norbert A1 - Schustek, Maximilian A1 - Lebedev, Alexey A1 - Schmitt-Landsiedel, Doris T1 - A 13.56MHz class e power amplifier for inductively coupled DC supply with 95% power added efficiency (PAE) T2 - 2015 International EURASIP Workshop on RFID Technology (EURFID), Rosenheim N2 - Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE). KW - Power generation KW - Inductors KW - Power amplifiers KW - Coils KW - Gallium nitride KW - Voltage measurement KW - Logic gates Y1 - 2015 UR - https://doi.org/10.1109/EURFID.2015.7332390 SP - 87 EP - 93 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, Doris T1 - A Low Impedance Drive Circuit to Suppress the Spurious Turn-On in High Speed Wide Band-Gap Semiconductor Halfbridges T2 - PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg N2 - A gate drive circuit for gallium nitride (GaN) enhancement mode (e-mode) transistors is presented, which avoids parasitic turn-on of the power devices in the halfbridge configuration. New e-mode GaN devices turn on at very low threshold voltages between 1V and 2V. This makes the transistors highly sensitive to spurious turn-on and thus reduces the required safety margin of the gate drive signals. To avoid this parasitic turn-on, a very low gate loop impedance is required. This prevents the halfbridge against bridge shorts during the switching events and guarantees stable gate drive control with increased switching efficiency. The new gate drive circuit is developed in a SPICE simulation environment and verified in a prototype setup by a double pulse test. The simulation matches very well with the experimental result and demonstrates the suppression of parasitic semiconductor turn-on with the proposed gate drive. Furthermore the dissipated switching energy is reduced, compared to a standard gate drive circuit. High DCDC converter efficiency of 98.67% at 1kW output power is achieved by using the driving circuit for a buck converter prototype with 200kHz switching frequency. KW - drive circuit Y1 - 2020 ER - TY - CHAP A1 - Seliger, Norbert A1 - Stubenrauch, Franz A1 - Schmitt-Landsiedel, Doris T1 - A Parametric Layout Study of Radiated Emission from High-Frequency Half-Bridge Switching Cells T2 - CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems, Nürnberg N2 - We present a numerical modeling study of radiated emission from half-bridge switching cells based on the method of moments (MoM). A low loop inductance cell design enables high-speed switching of power semiconductors which is demonstrated on a prototype circuit. The layout is further optimized for low radiated emission by variation of the heat sink placement. This is achieved by the heat sink attached to the phase terminal. The performance of the structure in terms of loop impedance, electric field radiation and sensitivity to cable attachments are numerically studied. Emission peaks arising from loop resonances can be reduced by over 20 dB with damping elements in the switching cell. The improved EMI performance of the proposed structure is attributed to decoupling of the loop current from the heat sink structure. KW - half-bridge switching cells Y1 - 2016 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, Doris T1 - A Simplified SPICE Model for Fast Parametric Optimization of High Voltage Power Electronic Circuits in the Megahertz Range T2 - CIPS 2016; 9th International Conference on Integrated Power Electronics Systems, Nürnberg N2 - An accurate SPICE model is proposed in this paper to calculate the power losses of high voltage converter systems. This supports power circuit optimization in the very first design stage. The parasitic package inductances and the nonlinear voltage dependent semiconductor capacitances are taken into account. In addition the high frequency behavior of the power inductor is investigated. A detailed loss breakdown is done to analyze the main sources of power loss and their physical reasons. The simulation results of the converter waveforms and of its efficiency match very well to the experimental results. The prototype boost converter shows a top efficiency greater than 98.3 % at a switching frequency of 1 MHz and an output voltage of 400 V at the maximum output power of 1 kW. KW - SPICE model Y1 - 2016 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Wittmann, Josef A1 - Kiermayer, Alexander A1 - Seliger, Norbert A1 - Hagl, Rainer A1 - Schmitt-Landsiedel, Doris A1 - Kennel, Ralph T1 - FPGA-based High Dynamic Servo Drive Control with a 200kHz Gallium Nitride Inverter T2 - 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), Warsaw, Poland N2 - Increased productivity in industrial processes can be achieved by dynamic and accurate positioning of servo drives. Therefore, improvement of servo drive dynamics using latest technologies in the key components such as inverter, control system and position measuring device are investigated. Using Gallium Nitride (GaN) or Silicon Carbide (SiC) semiconductors for motor inverters enables energy efficient operation up to pulse width modulation (PWM) frequencies of 500 kHz. This allows motor filters with small component sizes. As a result, high motor efficiency, low torque ripple, high control bandwidth and almost ideal sinusoidal output voltages are achieved. Experiments on a 200 kHz Gallium Nitride inverter with sine wave motor filter show a current control loop bandwidth of 3.2 kHz and almost ideal sinusoidal phase voltages. The achieved bandwidths of the speed and position control loops are 318 Hz and 106 Hz, respectively. KW - Servo drive control KW - Gallium Nitride Inverter KW - electrical drive Y1 - 2017 UR - https://doi.org/10.23919/EPE17ECCEEurope.2017.8098997 ER - TY - CHAP A1 - Stubenrauch, Franz A1 - Seliger, Norbert A1 - Schmitt-Landsiedel, Doris T1 - Design and Performance of a 200 kHz GaN Motor Inverter with Sine Wave Filter T2 - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg N2 - Gallium Nitride (GaN) semiconductor devices are promised to be a good alternative to Silicon (Si) semiconductors in future motor inverters for variable frequency drives (VFDs). They combine low on state resistance and low switching losses with a high blocking voltage capability. Compared to actual inverters based on insulated gate bipolar transistors (IGBTs) the pulse width modulation (PWM) frequency for efficient operation can be increased by a factor of 5 to 10, extending the PWM frequency range up to 500 kHz. This allows the use of motor filters with small component size. As a result, high motor efficiency, low torque ripple, high control bandwidth and nearly ideal sinusoidal output voltages are achieved. Therefore this inverters can be used for high speed spindle motors and dynamic servo drives. This paper focus on the design of a hybrid sine wave filter consisting of an analog and a digital part. The filter is optimized to achieve low power loss and high current control bandwidth. A 3-phase GaN motor inverter operating at 200 kHz PWM frequency at 400 V DC-link voltage verifies the system design. KW - motor inverter Y1 - 2020 ER - TY - CHAP A1 - Seliger, Norbert A1 - Stubenrauch, Franz A1 - Brendel, Christian A1 - Schmitt-Landsiedel, Doris T1 - Impact of Circuit Carrier Technologies on MHz-switching of GaN Half-Bridge Circuits T2 - PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy, Nürnberg N2 - Increasing the switching frequency has been one of the most beneficial advancements in modern power electronics. This trend has been enabled by progress in power semiconductors resulting in increased power densities, efficiencies and control dynamics. The aim of this study is to analyze the influence of three different circuit carrier technologies on switching power loss of 650 V hardswitching GaN devices. Limitations and solutions for half-bridge circuits operating at MHz-switching are investigated by modeling and experiments on a prototype. KW - GaN KW - Half-Bridge KW - MHz-switching KW - Substrate carrier technology Y1 - 2020 SP - 1407 EP - 1415 ER - TY - CHAP A1 - Stoettner, Julia A1 - Seliger, Norbert T1 - Ring resonator based signal and power transfer at UHF frequencies T2 - 6th International EURASIP Workshop on RFID Technology (EURFID) N2 - We present low-cost, high-efficient electromagnetic coupling between open ring geometry and a so-called butterfly structure on standard printed circuit boards (FR4) for the purpose of short range wireless data and power transfer at an UHF resonance frequency of 868 MHz. The components of the transfer system are characterized by simulation and experiments in terms of associated scattering parameters. Characterizing the efficiency of the coupled resonators, RF signal power transmission is examined for high power transfer as well as for low power DC supply utilizing a voltage doubler rectifier. With an enhanced butterfly structure coupler, unmodulated RF power transmission of 17.3 W is achieved with an efficiency of more than 95%. Furthermore, signal transmission of Pulse-Width-Modulated (PWM) signals with frequencies up to 5 MHz is demonstrated. KW - Resonators KW - electromagnetic coupling KW - UHF resonance frequency Y1 - 2018 PB - IEEE ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - A study of dielectric breakdown of a half-bridge switching cell with substrate integrated 650V GaN dies T2 - 2019 IEEE International Workshop on Integrated Power Packaging (IWIPP), Toulouse, France N2 - This paper proposes an ultra-low inductance half-bridge switching cell with substrate integrated 650V GaN bare dies. A vertical parallel-plate waveguide structure with 100 μm layer thickness results in a commutation loop inductance of 0.5 nH resulting in a negligible drain-source voltage overshoot in the inductive load standard pulse test. On the other hand reliable circuit operation requires an assessment of the isolation strength of the thin dielectric layer in the main commutation loop, because critical high local electric fields might occur between the pads. Measurements of the dielectric breakdown voltage followed by a statistical failure analysis provide a characteristic life of 14.7 kV and a 10% quantile of 13.5kV in the Weibull fitted data. This characteristic life depends strongly on the ambient temperature and drops to 4.1kV at 125°C. Additionally, ageing tests show an increasing in dielectric breakdown voltage after 500h, 1000h and 2000h at 125°C high-temperature storage due to resin densification processes. KW - half-bridge switching cell Y1 - 2019 UR - https://doi.org/10.1109/IWIPP.2019.8799104 ER - TY - JOUR A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips JF - Microelectronics Reliability N2 - We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs. KW - switching cell Y1 - 2019 UR - https://doi.org/10.1016/j.microrel.2019.06.064 VL - 100-101 SP - 113372 ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Performance of a GaN Half Bridge Switching Cell with Substrate Integrated Chips T2 - PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nürnberg N2 - Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance gives superior switching characteristics compared to circuits with packaged dies. Simulation and experimental results of an inverse double pulse test confirm our expectations. This study further reveals additional benefits of the proposed technology in terms of mechanical stability and thermal interfacing to heat sinks compared to circuits with packaged dies. KW - half bridge switching cell Y1 - 2019 ER - TY - CHAP A1 - Seliger, Norbert A1 - Dechant, Eduard A1 - Brendel, Christian A1 - Kennel, Ralph T1 - Reduction of Common Mode EMI noise in microstrip line based commutation paths designed for sub-nH loop inductance T2 - CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems, Berlin - Virtual Meeting N2 - We present a numerical and experimental design study for reducing conducted common mode noise for frequencies below 10MHz generated in switching cells comprising sub-nH commutation loops. Compared to conventional methods of adding external gate resistors our approach does not degrade efficiency. A parallel plate loop design (characterized by a minimum loop inductance and small board area usage) is found suboptimal in terms of conducted EMI compared to a micro-strip line loop geometry. The net ground impedance rather than the net ground inductance is found to mainly contribute to the observed EMI noise. KW - switching cell Y1 - 2020 ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Design of a Low Multi-Loop Inductance Three Level Neutral Point Clamped Converter with GaN HEMTs T2 - IEEE Energy Conversion Congress and Exposition (ECCE) N2 - This work shows a numerical and experimental analysis of a Neutral-Point-Clamp (NPC) three level inverter featuring an ultra low inductance printed circuit board (PCB) design in consideration of the mutual inductive and capacitive couplings. The commutation loops in this design are found to be strongly dependent on the vertical thickness of the used prepregs and the core. For vertical thicknesses ≤ 100 μm capacitive coupling must be taken into account in the switching cell design. Experimental measurements of a test set-up with a total PCB thickness of 400 μm results in commutation loop inductances from 1.4 nH up to 3.1 nH. In this set-up, switching tests without external gate resistor showed only a maximum voltage overshoot of 7% at 800 V. Based on a numerical analysis of the NPC cell we propose a further switching performance improvement with significant smaller parasitic inductance due to the application of novel printed circuit technologies such as the integration of bare dies into the printed circuit board or polyimide as an interlayer dielectric material. KW - Neutral-Point-Clamp (NPC) three level inverter KW - GaN HEMT KW - low multiloop inductance Y1 - 2020 PB - IEEE ER - TY - CHAP A1 - Seliger, Norbert T1 - A Free Oscillating Half-Bridge Converter for Capacitively Coupled Wireless Power Transfer T2 - IEEE 6th International Forum on Research and Technology for Society and Industry (RTSI) N2 - In this research we present a short distance capacitively coupled wireless power transfer (WPT) system with a self-oscillating half-bridge converter, which uses a positive feedback signal from the WPT system. By this novel implementation we find additional features of the system compared to linear amplifier based systems. With the DC bias voltage supplying the power converter, we achieve a controllable output power, tunable self-oscillation frequency and extension of the self-oscillation range. We present the analytical expressions for the converter waveforms. The theoretical analysis is confirmed by circuit simulation results and measurements on a prototype featuring a half-bridge converter with Gallium-Nitide (GaN) HEMTs. We achieve a system efficiency of 93% at a load power of 83W and 150kHz switching frequency. KW - wireless power transfer KW - capacitive coupling KW - GaN half-bridge KW - self-oscillation Y1 - 2021 PB - IEEE ER - TY - CHAP A1 - Seliger, Norbert T1 - Design of a Half-Bridge Converter for Self-Adapting Capacitive Wireless Power Transfer T2 - IEEE 2021 CENCON conference N2 - We present the design of a half-bridge converter for a capacitively coupled wireless power transfer system. The load signal acts as a positive feedback signal for a self-oscillation circuit which generates the driving gate signals for the converter. Our research reveals a robust wireless operation for a large range of load resistors and coupling capacitors. Based on an electric network analysis we obtain design criteria for self-oscillation and for the power transfer. The theoretical predictions are confirmed by circuit simulation and measurement results on a converter prototype with GaN-HEMTs. We report on a transfer efficiency of 92% for a power greater than 50W at a switching frequency of 300kHz and 200V DC link voltage. KW - GaN half-bridge KW - Wireless power transfer KW - Capacitive coupling KW - Self-adaptive Y1 - 2021 PB - IEEE ER - TY - CHAP A1 - Seliger, Norbert T1 - Self-Oscillating Capacitive Power Transfer with Multiple Receiver Capability and Coupling Path Adaption T2 - Proceedings 24th European Conference on Power Electronics and Applications (EPE’22 ECCE Europe) KW - Capacitive Coupling KW - Half Bridge KW - Wireless power transmission KW - Gallium Nitride (GaN) KW - HEMT KW - Contactless energy transfer KW - High frequency power converter Y1 - 2022 PB - EPE ER - TY - CHAP A1 - Seliger, Norbert A1 - Faltlhauser, Georg T1 - Active Expansion Sampling of Magnetic Near-Fields in Unbounded Regions T2 - Proceedings 26th IEEE Workshop on Signal and Power Integrity (IEEE SPI-2022) KW - Magnetic Near Field Scanning, Machine Learning, Active Expansion Sampling, Method of Moments Y1 - 2022 PB - IEEE ER - TY - CHAP A1 - Seliger, Norbert A1 - Dechant, Eduard A1 - Kennel, Ralph T1 - EMI mitigation by substrate integrated common mode filter T2 - Proceedings of 12th International Conference on Integrated Power Electronics Systems (CIPS 2022) KW - EMI filter, DGS, GaN-HEMTs Y1 - 2022 PB - VDE CY - Berlin (Germany) ER - TY - CHAP A1 - Seliger, Norbert T1 - A Differential Relaxation Oscillator for Inductive Power Transfer T2 - 2022 IEEE Industrial Electronics and Applications Conference (IEACon) N2 - We present a novel differential relaxation oscillator for inductive power transfer. The proposed oscillator offers an automatic adaption of the oscillation period to a change in the power link impedance, which ensures a high efficient operation for variable loads and coupling factors. A detailed circuit model of the self-oscillation system is provided with analytical design equations. We find a large self-oscillation range for variable coupling factors and loads. The theoretical results are confirmed by circuit simulation and measurements carried out on a low-power demonstrator system. We demonstrate non-resonant and robust self-adaption of the relaxation oscillator to coupling factors ranging from k=0.6-0.9. KW - Relaxation Oscillator KW - Inductive Power Transfer Y1 - 2022 SP - 1 EP - 6 PB - IEEE ER - TY - CHAP A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Common Mode DGS EMI Filter Integrated into a GaN Half Bridge Switching Cell T2 - Procceedings International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2022) KW - EMI filter, DGS, GaN-HEMTs, Switching Cell Y1 - 2022 PB - Mesago ER - TY - CHAP A1 - Seliger, Norbert T1 - A Differential Relaxation Half-Bridge Oscillator for Inductive Power Transfer T2 - Proceedings PCIM Europe 2023 N2 - We present inductive power transfer (IPT) with a half-bridge converter based on differential relaxation self-oscillation. The oscillation dynamics of the converter automatically adapts to variation in the inductive coupling link and changes in the load, respectively. Design equations based on theoretical circuit analysis reveals a high power transfer efficiency (>90%) for alteration of coupling distance in the strong coupling regime. A prototype system employing GaN-HEMTs confirms the theoretically predicted characteristics of the proposed circuit. KW - wireless power transfer, inductive power transfer, half-bridge converter, relaxation oscillator Y1 - 2023 PB - Mesago GmbH CY - Nürnberg ER - TY - JOUR A1 - Seliger, Norbert A1 - Faltlhauser, Georg T1 - Progressive Expansion Sampling of Quasi-Static Magnetic Fields in Unconfined Regions JF - IEEE Transactions on Components, Packaging and Manufacturing Technology N2 - We present a fast and accurate measurement technique for quasi-static magnetic fields by employing a progressive sampling method in an unconfined input space. The proposed machine learning algorithm is tested against uniform sampling on printed circuit board test structures and a buck converter. We prove allocation of multiple, separated regions with predefined lateral field limits at MHz frequencies. The feasibility of equivalent magnetic dipole source modeling based on a small number of samples is demonstrated. Compared to uniform testing, progressive expansion sampling identifies contours of given field limits in less than 3% of the reference measurement time. KW - Progressive Expansion Sampling KW - Near-Field Scanning KW - Machine Learning KW - Gaussian Process Classifier KW - MoM modeling Y1 - 2023 U6 - https://doi.org/10.1109/TCPMT.2023.3283285 ER - TY - CHAP A1 - Seliger, Norbert A1 - Faltlhauser, Georg T1 - Progressive Expansion Sampling of Quasi-Static Magnetic Fields for EMI Noise Detection and Equivalent Source Modeling T2 - Proceedings EMC Europe 2023 N2 - We introduce a quick and accurate quasi-static magnetic field scanning technique by employing a progressive sampling method in an unconfined input space. The proposed machine learning algorithm is tested against uniform sampling on a printed circuit board test structure. We prove allocation of multiple, separated regions with predefined tangential field strengths at MHz frequencies. The feasibility of equivalent magnetic dipole source modeling based on a small number of samples is demonstrated. Compared to uniform testing, progressive expansion sampling detects contours of given field limits in less than 3% of the reference measurement time. KW - magnetic near field KW - Gaussian process classifier KW - EMI Y1 - 2023 PB - IEEE CY - Krakov ER - TY - CHAP A1 - Seliger, Norbert A1 - Honsa, Johannes T1 - A Planar Magneto-Inductive Device with Modulated Mutual Inductance for Wireless Power Transmission T2 - 2023 IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (APWC) N2 - A Magneto-Inductive Wave (MIW) structure for wireless power transfer (WPT) is proposed with switchable mutual inductance between neighbored coupling coils. Orthogonally placed switchable short circuit loops are added in order to modulate the wave propagation properties of the MIW structure without changing the resonance frequency. We derive an analytical model based on lumped circuit analysis for the MIW waveguide and successfully evaluate the theoretical findings by circuit modeling and field simulation. We demonstrate switchable, i.e. addressable, guided wireless power transfer along an experimental MIW structure at a resonance frequency of 20.5 MHz. KW - Magneto-Inductive Device, Wireless Power Transmission, Mutual Inductance Y1 - 2023 SN - 979-8-3503-2060-2 U6 - https://doi.org/10.1109/APWC57320.2023.10297488 SN - 2766-287X SP - 26 EP - 31 PB - IEEE CY - Venice (Italy) ER - TY - CHAP A1 - Seliger, Norbert A1 - Honsa, Johannes T1 - Time-variable Mutual Inductance for Enhanced Inductive Power Transmission T2 - Proceedings International Symposium on Fundamentals of Electrical Engineering 2023 (ISFEE 2023) N2 - Enhanced inductive power transmission (IPT) between coaxially arranged circular coils is introduced by time-modulation of the mutual inductance. This modulation is accomplished by coherent switching of the short circuit current induced in a third loop. An analytical circuit model supporting the design for future time-modulated IPT systems is derived. We demonstrate an increase in load rms-voltage by 13% (28% gain in power) compared to an unmodulated transfer on an experimental system operating at fundamental frequencies ranging from 40kHz to 500kHz. KW - Mutual Inductance KW - Inductive Power Transmission KW - Time-variable Inductance Y1 - 2023 SN - tbd PB - IEEE CY - Bucharest, Romania ER - TY - CHAP A1 - Seliger, Norbert A1 - Helmbrecht, Cordula T1 - A high-frequency performance and degradation study of adhesive conductive EMI shielding tapes during High-Temperature Storage T2 - Proccedings CIPS 2024 - 13th International Conference on Integrated Power Electronics Systems N2 - The variation of the contact impedance of adhesive conductive EMI shielding tapes under high temperature storage (HTS) of 110degC is investigated. The adhesive tapes under test are implemented as signal return paths in microstrip lines. Changes in the ground plane impedance by adhesive deterioration are analyzed by S-parameter measurements from 1MHz to 3GHz. A circuit model for contact impedance degradation is proposed and applied in simulation of board level shielding. Contact resistance and contact capacitance are found to increase significantly after 2400h, causing a declined magnetic field shielding effectiveness by 30 dB below 500 MHz. KW - EMI KW - Shielding tape KW - High-Temperature Storage KW - adhesive conductive EMI shielding tape Y1 - 2024 SN - 978-3-8007-6288-0 SN - 0341-3934 SP - 297 EP - 303 PB - VDE VERLAG GMBH CY - Düsseldorf ER - TY - CHAP A1 - Seliger, Norbert T1 - Reconfigurable Polygonal Planar Inductor with Bistable Snapping Mechanism T2 - 2024 IEEE Open Conference of Electrical, Electronic and Information Sciences (eStream), Vilnius, Lithuania N2 - A mechanically tunable planar single-turn inductor in air is proposed. The bistable flexible deflection of axially compressed wire segments is used for variation of the loop area of regular polygonal loop inductors. We present analytical expressions for the loop inductance and confirm the theoretical findings by magneto-quasi-static field simulation on exemplary polygonal circuits. KW - Inductance KW - Inductors KW - Design methodology KW - Wires KW - Magnetic Analysis Y1 - 2024 SN - 979-8-3503-5241-2 U6 - https://doi.org/10.1109/eStream61684.2024.10542595 SN - 2690-8506 SP - 1 EP - 6 ER -