TY - JOUR A1 - Seliger, Norbert A1 - Pogany, D. A1 - Fuerboeck, C. A1 - Habas, P. A1 - Gornik, E. T1 - A laser beam method for evaluation of thermal time constant in smart power devices JF - Microelectronics Reliability Y1 - 2023 U6 - https://doi.org/10.1016/S0026-2714(97)00149-2 VL - 37 IS - 10/11 SP - 1727 EP - 1730 ER - TY - JOUR A1 - Seliger, Norbert A1 - Habaš, Predrag A1 - Gornik, Erich T1 - A study of backside laser-probe signals in MOSFETs JF - Microelectronic Engineering Y1 - 2023 U6 - https://doi.org/10.1016/0167-9317(95)00329-0 VL - 31 IS - 1-4 SP - 87 EP - 94 ER - TY - JOUR A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips JF - Microelectronics Reliability N2 - We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs. KW - switching cell Y1 - 2019 UR - https://doi.org/10.1016/j.microrel.2019.06.064 VL - 100-101 SP - 113372 ER -