<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>1585</id>
    <completedYear>2000</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>387</pageFirst>
    <pageLast>397</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>47</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2020-10-13</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Self-heating and kink effects in a-Si:H thin film transistors</title>
    <abstract language="eng">We describe a new physics based, analytical DC model accounting for short channel effects for hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's). This model is based on the long channel device model. Two important short-channel phenomena, self-heating and kink effects, are analyzed in detail. For the self-heating effect, a thermal kinetic analysis is carried out and a physical model and an equivalent circuit are used to estimate the thermal resistance of the device. In deriving the analytical model for self-heating effect, a first order approximation and self-consistency are used to give an iteration-free model accurate for a temperature rise of up to 100/spl deg/C. In the modeling of the kink effects, a semi-empirical approach is used based on the physics involved. The combined model accurately reproduces the DC characteristics of a-Si:H TFT's with a gate length of the 4 /spl mu/m. Predictions for a-Si:H TFT's scaled down to 1 /spl mu/m are also provided. The model is suitable for use in device and circuit simulators.</abstract>
    <parentTitle language="eng">IEEE Transactions on Electron Devices</parentTitle>
    <identifier type="url">https://doi.org/10.1109/16.822285</identifier>
    <enrichment key="PeerReviewed">Ja</enrichment>
    <enrichment key="RS_Correlation">Nein</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <enrichment key="review.accepted_by">2</enrichment>
    <author>L. Wang</author>
    <author>T.A. Fjeldly</author>
    <author>B. Iniguez</author>
    <author>Holly C. Slade</author>
    <author>M.S. Shur</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Amorphous semiconductors</value>
    </subject>
    <collection role="institutes" number="">Fakultät für Holztechnik und Bau</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
</export-example>
