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<export-example>
  <doc>
    <id>1589</id>
    <completedYear>1996</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>223</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>3</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2020-10-14</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Analytical Models for Amorphous Silicon and Polysilicon TFTs for High Definition Display Technology</title>
    <parentTitle language="eng">Journal of the Society for Information Display</parentTitle>
    <enrichment key="PeerReviewed">Ja</enrichment>
    <enrichment key="RS_Correlation">Nein</enrichment>
    <enrichment key="review.accepted_by">2</enrichment>
    <author>M.S. Shur</author>
    <author>M. Jacunski</author>
    <author>Holly C. Slade</author>
    <author>M. Hack</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin Film Transistors</value>
    </subject>
    <collection role="institutes" number="">Fakultät für Holztechnik und Bau</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
  <doc>
    <id>1588</id>
    <completedYear>1996</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2560</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>17</issue>
    <volume>69</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2020-10-14</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Below threshold conduction in a‐Si:H thin film transistors with and without a silicon nitride passivating layer</title>
    <abstract language="eng">We report temperature measurements of inverted staggered amorphous silicon thin film transistor subthreshold conductance for devices with and without a top silicon nitride passivating layer. Subthreshold conductance activation energies clearly show the different conductance paths in the active layer of these devices. Transistors with no top nitride layer conduct in the bulk amorphous silicon, whereas the devices with a top nitride layer conduct at the interface between the amorphous silicon and the top nitride (a ‘‘back’’ channel). Gate bias stressing and light soaking experiments uphold the existence of the back channel. We also present two‐dimensional simulations that support our interpretation of the experimental data.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="url">https://doi.org/10.1063/1.117739</identifier>
    <enrichment key="PeerReviewed">Ja</enrichment>
    <enrichment key="RS_Correlation">Nein</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <enrichment key="review.accepted_by">2</enrichment>
    <author>Holly C. Slade</author>
    <author>M.S. Shur</author>
    <author>S.C. Deane</author>
    <author>M. Hack</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nitrides</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin film transistors</value>
    </subject>
    <collection role="institutes" number="">Fakultät für Holztechnik und Bau</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
  <doc>
    <id>1593</id>
    <completedYear>1996</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2020-10-14</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Physics of Below Threshold Current Distribution in a-Si:H TFTs</title>
    <parentTitle language="eng">Materials Research Society, Proceedings, Amorphous Silicon Technology</parentTitle>
    <note>Paper recieved a Graduate Research Student Award</note>
    <enrichment key="RS_Correlation">Nein</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <enrichment key="review.accepted_by">2</enrichment>
    <author>Holly C. Slade</author>
    <author>M.S. Shur</author>
    <author>S.C. Deane</author>
    <author>M. Hack</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin Film Transistors</value>
    </subject>
    <collection role="institutes" number="">Fakultät für Holztechnik und Bau</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
  <doc>
    <id>1595</id>
    <completedYear>1995</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>725</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>377</volume>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2020-10-14</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Temperature and Frequency Dependent Characteristics of Amorphous Silicon Thin Film Transistors</title>
    <parentTitle language="eng">Materials Research Society Proceedings, Amorphous Silicon Technology</parentTitle>
    <enrichment key="RS_Correlation">Nein</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <enrichment key="review.accepted_by">2</enrichment>
    <author>Holly C. Slade</author>
    <author>M.S. Shur</author>
    <author>M. Hack</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin Film Transistors</value>
    </subject>
    <collection role="institutes" number="">Fakultät für Holztechnik und Bau</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
  <doc>
    <id>1596</id>
    <completedYear>1994</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>207</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>35</issue>
    <volume>94</volume>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2020-10-14</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Effects of Stress on the Density of States in Amorphous Silicon TFTs</title>
    <parentTitle language="eng">Electrochemical Society Proceedings, Thin Film Transistors II</parentTitle>
    <enrichment key="RS_Correlation">Nein</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <enrichment key="review.accepted_by">2</enrichment>
    <author>Holly C. Slade</author>
    <author>T. Globus</author>
    <author>B. Gelmont</author>
    <author>M.S. Shur</author>
    <author>M. Hack</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin Film Transistors</value>
    </subject>
    <collection role="institutes" number="">Fakultät für Holztechnik und Bau</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
  <doc>
    <id>1597</id>
    <completedYear>1994</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>823</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>336</volume>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2020-10-14</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Density of Deep Bandgap States in Amorphous Silicon from the Temperature Dependencies of Thin Film Transistor Current</title>
    <parentTitle language="eng">Materials Research Society Proceedings, Amorphous Silicon Technology</parentTitle>
    <enrichment key="RS_Correlation">Nein</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <enrichment key="review.accepted_by">2</enrichment>
    <author>T. Globus</author>
    <author>Holly C. Slade</author>
    <author>M.S. Shur</author>
    <author>M. Hack</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin Film Transistor</value>
    </subject>
    <collection role="institutes" number="">Fakultät für Holztechnik und Bau</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
</export-example>
