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  <doc>
    <id>2231</id>
    <completedYear>1999</completedYear>
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    <language>eng</language>
    <pageFirst>925</pageFirst>
    <pageLast>930</pageLast>
    <pageNumber>6</pageNumber>
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    <issue>6</issue>
    <volume>39</volume>
    <type>article</type>
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    <belongsToBibliography>0</belongsToBibliography>
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    <publishedDate>2023-06-09</publishedDate>
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    <title language="eng">Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress</title>
    <parentTitle language="deu">Microelectronics Reliability</parentTitle>
    <identifier type="issn">0026-2714</identifier>
    <identifier type="doi">10.1016/S0026-2714(99)00124-9</identifier>
    <enrichment key="opus.import.data">@articlefurbock_laser_1999, title = Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress, volume = 39, issn = 0026-2714, url = https://www.sciencedirect.com/science/article/pii/S0026271499001249, doi = 10.1016/S0026-2714(99)00124-9, series = European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, abstract = A backside heterodyne interferometric technique is presented to study thermal effects in smart-power electrostatic discharge (ESD) protection devices during the ESD stress. The temperature increase in the device active area causes an increase in the silicon refractive index (thermo-optical effect) which is monitored by the time-resolved measurements of optical phase changes. Thermal dynamics and spatial temperature distribution in different types of npn transistor structures biased in the avalanche multiplication or snapback regime are studied with nanosecond time and micrometer spatial resolution. The activity and inactivity of the bipolar transistor action is indicated by the dominant signal arising from the emitter or base region, respectively. Hot spots have been found at the edges of the structures and attributed to the current crowding effect in the emitter., pages = 925–930, number = 6, journaltitle = Microelectronics Reliability, shortjournal = Microelectronics Reliability, author = Fürböck, C. and Litzenberger, M. and Pogany, D. and Gornik, E. and Seliger, N. and Müller-Lynch, T. and Stecher, M. and Goßner, H. and Werner, W., urldate = 2023-06-06, date = 1999-06-01, langid = english,</enrichment>
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    <author>C. Fürböck</author>
    <author>M. Litzenberger</author>
    <author>D. Pogany</author>
    <author>E. Gornik</author>
    <author>Norbert Seliger</author>
    <author>T. Müller-Lynch</author>
    <author>M. Stecher</author>
    <author>H. Goßner</author>
    <author>W. Werner</author>
    <collection role="institutes" number="">Fakultät für Ingenieurwissenschaften</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
  <doc>
    <id>2232</id>
    <completedYear>1999</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1143</pageFirst>
    <pageLast>1148</pageLast>
    <pageNumber>6</pageNumber>
    <edition/>
    <issue>6</issue>
    <volume>39</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2023-06-09</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices</title>
    <parentTitle language="deu">Microelectronics Reliability</parentTitle>
    <identifier type="issn">0026-2714</identifier>
    <identifier type="doi">10.1016/S0026-2714(99)00162-6</identifier>
    <enrichment key="opus.import.data">@articlepogany_damage_1999, title = Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices, volume = 39, issn = 0026-2714, url = https://www.sciencedirect.com/science/article/pii/S0026271499001626, doi = 10.1016/S0026-2714(99)00162-6, series = European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, abstract = Electrostatic discharge (ESD) stress - induced damage is analyzed in smart-power technology ESD protection devices. The lateral position of the ESD damage in diode and npn transistor protection structures is analyzed by using backside infrared microscopy. The lateral extension of the ESD damage is correlated with the magnitude and shape of the IV characteristics. The vertical position of the ESD damage and its stress-induced progress from the surface contact region to the bulk is obtained from the analysis of the stress-evolution of both the reverse and forward leakage current characteristics and from numerical analysis. The damage penetration into the zero-bias space charge region of the breakdown-voltage controlling pn junction is indicated by the onset of the increase of the forward leakage current., pages = 1143–1148, number = 6, journaltitle = Microelectronics Reliability, shortjournal = Microelectronics Reliability, author = Pogany, D. and Seliger, N. and Litzenberger, M. and Gossner, H. and Stecher, M. and Müller-Lynch, T. and Werner, W. and Gornik, E., urldate = 2023-06-06, date = 1999-06-01, langid = english,</enrichment>
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    <author>D. Pogany</author>
    <author>Norbert Seliger</author>
    <author>M. Litzenberger</author>
    <author>H. Gossner</author>
    <author>M. Stecher</author>
    <author>T. Müller-Lynch</author>
    <author>W. Werner</author>
    <author>E. Gornik</author>
    <collection role="institutes" number="">Fakultät für Ingenieurwissenschaften</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
  <doc>
    <id>2244</id>
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    <language>eng</language>
    <pageFirst>241</pageFirst>
    <pageLast>250</pageLast>
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    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2023-06-15</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices</title>
    <parentTitle language="eng">Electrical Overstress/Electrostatic Discharge Symposium Proceedings</parentTitle>
    <identifier type="doi">10.1109/EOSESD.1999.819067</identifier>
    <enrichment key="PeerReviewed">Ja</enrichment>
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    <author>C. Fürböck</author>
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    <author>E. Gornik</author>
    <author>Norbert Seliger</author>
    <author>H. Gossner</author>
    <author>T. Müller-Lynch</author>
    <author>M. Stecher</author>
    <author>W. Werner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ESD</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>smart power device</value>
    </subject>
    <collection role="ddc" number="600">Technik, Technologie</collection>
    <collection role="institutes" number="">Fakultät für Ingenieurwissenschaften</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
  <doc>
    <id>2245</id>
    <completedYear>2000</completedYear>
    <publishedYear/>
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    <language>eng</language>
    <pageFirst>195</pageFirst>
    <pageLast>213</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>49</volume>
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    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
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    <title language="eng">Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices</title>
    <parentTitle language="eng">Journal of Electrostatics</parentTitle>
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    <author>E. Gornik</author>
    <author>Norbert Seliger</author>
    <author>H. Gossner</author>
    <author>T. Müller-Lynch</author>
    <author>M. Stecher</author>
    <author>W. Werner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ESD</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>smart power device</value>
    </subject>
    <collection role="ddc" number="600">Technik, Technologie</collection>
    <collection role="institutes" number="">Fakultät für Ingenieurwissenschaften</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
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