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  <doc>
    <id>2231</id>
    <completedYear>1999</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>925</pageFirst>
    <pageLast>930</pageLast>
    <pageNumber>6</pageNumber>
    <edition/>
    <issue>6</issue>
    <volume>39</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>2023-06-09</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress</title>
    <parentTitle language="deu">Microelectronics Reliability</parentTitle>
    <identifier type="issn">0026-2714</identifier>
    <identifier type="doi">10.1016/S0026-2714(99)00124-9</identifier>
    <enrichment key="opus.import.data">@articlefurbock_laser_1999, title = Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress, volume = 39, issn = 0026-2714, url = https://www.sciencedirect.com/science/article/pii/S0026271499001249, doi = 10.1016/S0026-2714(99)00124-9, series = European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, abstract = A backside heterodyne interferometric technique is presented to study thermal effects in smart-power electrostatic discharge (ESD) protection devices during the ESD stress. The temperature increase in the device active area causes an increase in the silicon refractive index (thermo-optical effect) which is monitored by the time-resolved measurements of optical phase changes. Thermal dynamics and spatial temperature distribution in different types of npn transistor structures biased in the avalanche multiplication or snapback regime are studied with nanosecond time and micrometer spatial resolution. The activity and inactivity of the bipolar transistor action is indicated by the dominant signal arising from the emitter or base region, respectively. Hot spots have been found at the edges of the structures and attributed to the current crowding effect in the emitter., pages = 925–930, number = 6, journaltitle = Microelectronics Reliability, shortjournal = Microelectronics Reliability, author = Fürböck, C. and Litzenberger, M. and Pogany, D. and Gornik, E. and Seliger, N. and Müller-Lynch, T. and Stecher, M. and Goßner, H. and Werner, W., urldate = 2023-06-06, date = 1999-06-01, langid = english,</enrichment>
    <enrichment key="opus.import.dataHash">md5:47d81036bcb4b51ade93e671c8adbefd</enrichment>
    <enrichment key="opus.import.date">2023-06-09T07:22:10+00:00</enrichment>
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    <enrichment key="opus.import.id">6482d3224b71a5.54058441</enrichment>
    <enrichment key="review.accepted_by">2</enrichment>
    <enrichment key="RS_Correlation">Nein</enrichment>
    <author>C. Fürböck</author>
    <author>M. Litzenberger</author>
    <author>D. Pogany</author>
    <author>E. Gornik</author>
    <author>Norbert Seliger</author>
    <author>T. Müller-Lynch</author>
    <author>M. Stecher</author>
    <author>H. Goßner</author>
    <author>W. Werner</author>
    <collection role="institutes" number="">Fakultät für Ingenieurwissenschaften</collection>
    <thesisPublisher>Technische Hochschule Rosenheim</thesisPublisher>
  </doc>
</export-example>
