@article{WangFjeldlyIniguezetal.2000, author = {Wang, L. and Fjeldly, T.A. and Iniguez, B. and Slade, Holly C. and Shur, M.S.}, title = {Self-heating and kink effects in a-Si:H thin film transistors}, series = {IEEE Transactions on Electron Devices}, volume = {47}, journal = {IEEE Transactions on Electron Devices}, number = {2}, pages = {387 -- 397}, year = {2000}, abstract = {We describe a new physics based, analytical DC model accounting for short channel effects for hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's). This model is based on the long channel device model. Two important short-channel phenomena, self-heating and kink effects, are analyzed in detail. For the self-heating effect, a thermal kinetic analysis is carried out and a physical model and an equivalent circuit are used to estimate the thermal resistance of the device. In deriving the analytical model for self-heating effect, a first order approximation and self-consistency are used to give an iteration-free model accurate for a temperature rise of up to 100/spl deg/C. In the modeling of the kink effects, a semi-empirical approach is used based on the physics involved. The combined model accurately reproduces the DC characteristics of a-Si:H TFT's with a gate length of the 4 /spl mu/m. Predictions for a-Si:H TFT's scaled down to 1 /spl mu/m are also provided. The model is suitable for use in device and circuit simulators.}, language = {en} } @inproceedings{IniguezWangFjeldlyetal.1998, author = {Iniguez, B. and Wang, L. and Fjeldly, T. and Shur, M.S. and Slade, Holly C.}, title = {Thermal, Self-Heating and Kink Effects in a-Si:H Thin Film Transistors}, series = {IEDM Technical Digest}, booktitle = {IEDM Technical Digest}, year = {1998}, language = {en} } @inproceedings{ShurSladeYtterdaletal.1997, author = {Shur, M.S. and Slade, Holly C. and Ytterdal, T. and Wang, L. and Xu, Z. and Aflatooni, K. and Byun, Y. and Chen, Y. and Froggatt, M. and Krishnan, A. and Mei, P. and Meiling, H. and Min, B.-H. and Nathan, A. and Sherman, S. and Stewart, M. and Theiss, S.D.}, title = {Modeling and Scaling of a-Si:H and poly-Si Thin Film Transistors}, series = {Materials Research Society, Proceedings, Amorphous Silicon Technology}, booktitle = {Materials Research Society, Proceedings, Amorphous Silicon Technology}, year = {1997}, language = {en} }