@article{ShurSladeJacunskietal.1997, author = {Shur, M.S. and Slade, Holly C. and Jacunski, M.D. and Owusu, A.A. and Ytterdal, T.}, title = {SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors}, series = {Journal of The Electrochemical Society}, volume = {144}, journal = {Journal of The Electrochemical Society}, number = {8}, pages = {2833 -- 2839}, year = {1997}, abstract = {We describe physically based analytical models for n-channel amorphous silicon thin film transistors and for n- and p-channel polysilicon thin film transistors. The models cover all regimes of transistor operation: leakage, subthreshold, above-threshold conduction, and the kink regime in polysilicon thin film transistors. The models contain a minimum number of parameters which are easily extracted and can be readily related to the structural and material properties of the thin film transistors. The models have been verified for a large number of devices to scale properly with device geometry.}, language = {en} }