@inproceedings{SladeShurHack1995, author = {Slade, Holly C. and Shur, M.S. and Hack, M.}, title = {Temperature and Frequency Dependent Characteristics of Amorphous Silicon Thin Film Transistors}, series = {Materials Research Society Proceedings, Amorphous Silicon Technology}, volume = {377}, booktitle = {Materials Research Society Proceedings, Amorphous Silicon Technology}, pages = {725}, year = {1995}, language = {en} } @article{SladeShurDeaneetal.1996, author = {Slade, Holly C. and Shur, M.S. and Deane, S.C. and Hack, M.}, title = {Below threshold conduction in a-Si:H thin film transistors with and without a silicon nitride passivating layer}, series = {Applied Physics Letters}, volume = {69}, journal = {Applied Physics Letters}, number = {17}, pages = {2560}, year = {1996}, abstract = {We report temperature measurements of inverted staggered amorphous silicon thin film transistor subthreshold conductance for devices with and without a top silicon nitride passivating layer. Subthreshold conductance activation energies clearly show the different conductance paths in the active layer of these devices. Transistors with no top nitride layer conduct in the bulk amorphous silicon, whereas the devices with a top nitride layer conduct at the interface between the amorphous silicon and the top nitride (a ''back'' channel). Gate bias stressing and light soaking experiments uphold the existence of the back channel. We also present two-dimensional simulations that support our interpretation of the experimental data.}, language = {en} } @inproceedings{SladeShurDeaneetal.1996, author = {Slade, Holly C. and Shur, M.S. and Deane, S.C. and Hack, M.}, title = {Physics of Below Threshold Current Distribution in a-Si:H TFTs}, series = {Materials Research Society, Proceedings, Amorphous Silicon Technology}, booktitle = {Materials Research Society, Proceedings, Amorphous Silicon Technology}, year = {1996}, language = {en} } @inproceedings{SladeShurDeaneetal.1995, author = {Slade, Holly C. and Shur, M.S. and Deane, S.C. and Hack, M.}, title = {Amorphous Silicon TFTs: Material Characterization, Device Operation, and Bias Stress Modeling}, series = {The Electrochemical Society Extended Abstracts}, volume = {95}, booktitle = {The Electrochemical Society Extended Abstracts}, number = {2}, pages = {861}, year = {1995}, language = {en} } @inproceedings{SladeGlobusGelmontetal.1994, author = {Slade, Holly C. and Globus, T. and Gelmont, B. and Shur, M.S. and Hack, M.}, title = {Effects of Stress on the Density of States in Amorphous Silicon TFTs}, series = {Electrochemical Society Proceedings, Thin Film Transistors II}, volume = {94}, booktitle = {Electrochemical Society Proceedings, Thin Film Transistors II}, number = {35}, pages = {207}, year = {1994}, language = {en} } @article{ShurJacunskiSladeetal.1996, author = {Shur, M.S. and Jacunski, M. and Slade, Holly C. and Hack, M.}, title = {Analytical Models for Amorphous Silicon and Polysilicon TFTs for High Definition Display Technology}, series = {Journal of the Society for Information Display}, volume = {3}, journal = {Journal of the Society for Information Display}, number = {4}, pages = {223}, year = {1996}, language = {en} } @inproceedings{GlobusSladeShuretal.1994, author = {Globus, T. and Slade, Holly C. and Shur, M.S. and Hack, M.}, title = {Density of Deep Bandgap States in Amorphous Silicon from the Temperature Dependencies of Thin Film Transistor Current}, series = {Materials Research Society Proceedings, Amorphous Silicon Technology}, volume = {336}, booktitle = {Materials Research Society Proceedings, Amorphous Silicon Technology}, pages = {823}, year = {1994}, language = {en} }