@misc{AmerZentgrafOber2026, author = {Amer, Sherif and Zentgraf, Peter and Ober, Eduard}, title = {Damping of Sloshing in a Moving Container}, series = {Tagungsband | AALE 2026}, journal = {Tagungsband | AALE 2026}, doi = {10.33968/2026.01}, pages = {191 -- 200}, year = {2026}, abstract = {Liquid sloshing limits speed, accuracy, and reliability of pick-and-place systems, laboratory automation, and mobile robots that transport open containers. Motivated by industrial anti-sloshing motion functions [1], this work presents a compact testbed and a simple open-loop strategy that reproduces the effect on a low-cost setup. A camera rigidly mounted to the carriage moves with the tank and records the free surface, enabling extraction of the visible surface angle per frame. The first two sloshing frequencies and the dominant-mode damping are identified from experiments. The dominant mode is then modeled as a lightly damped second-order system excited by the carriage motion. Two command-side strategies are compared: Zero-Vibration-Derivative (ZVD) input shaping and an inverse transfer function prefilter. The ZVD method delivers near-zero residual slosh after the end of the move with a predictable, fixed time extension equal to the damped period. The inverse function prefilter also suppresses the sloshing with the advantage of being a simpler approach. Both approaches are open-loop and need only the identified frequency and damping for a given fill level of the container. A single-mode simulation based on the identified model predicts the measured behaviour successfully, and both suppression strategies are verified in simulation and experiments.}, language = {en} } @inproceedings{BrunnerHagl2024, author = {Brunner, Christian and Hagl, Rainer}, title = {Tilting Measurement and Compensation in Robotic Joints}, series = {The 10th International Conference on Mechatronics and Robotics Engineering (ICMRE), Milan, Italy, 2024}, booktitle = {The 10th International Conference on Mechatronics and Robotics Engineering (ICMRE), Milan, Italy, 2024}, year = {2024}, language = {en} } @inproceedings{BurianPoganyLalinskyetal.1997, author = {Burian, E. and Pogany, D. and Lalinsky, T. and Seliger, Norbert and Gornik, E.}, title = {Thermal Simulation and characterization of GaAs micromachined power sensor microsystems}, series = {Eurosensors XI}, booktitle = {Eurosensors XI}, pages = {949 -- 952}, year = {1997}, language = {en} } @article{CastellazziKartalKrausetal.2003, author = {Castellazzi, A. and Kartal, V. and Kraus, R. and Seliger, Norbert and Honsberg-Riedl, M. and Schmitt-Landsiedel, D.}, title = {Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's}, series = {Microelectronics Reliability}, volume = {43}, journal = {Microelectronics Reliability}, number = {9}, issn = {0026-2714}, doi = {10.1016/S0026-2714(03)00319-6}, pages = {1877 -- 1882}, year = {2003}, language = {en} } @article{CastellazziKrausSeligeretal.2002, author = {Castellazzi, A. and Kraus, R. and Seliger, Norbert and Schmitt-Landsiedel, D.}, title = {Reliability analysis of power MOSFET's with the help of compact models and circuit simulation}, series = {Microelectronics Reliability}, volume = {42}, journal = {Microelectronics Reliability}, number = {9}, issn = {0026-2714}, doi = {10.1016/S0026-2714(02)00198-1}, pages = {1605 -- 1610}, year = {2002}, language = {en} } @inproceedings{CastellazziKrausSeligeretal.2003, author = {Castellazzi, A. and Kraus, R. and Seliger, Norbert and Schmitt-Landsiedel, D.}, title = {Influence of parasitic inductances on the switching behaviour of Power MOSFETs used in automotive applications}, series = {Proc. 10th European Conference on Power Electronics and Applications, EPE}, volume = {10}, booktitle = {Proc. 10th European Conference on Power Electronics and Applications, EPE}, year = {2003}, language = {en} } @article{CoqueryLefrancLichtetal.2003, author = {Coquery, G. and Lefranc, G. and Licht, T. and Lallemand, R. and Seliger, Norbert and Berg, H.}, title = {High temperature reliability on automotive power modules verified by power cycling tests up to 150°C}, series = {Microelectronics Reliability}, volume = {43}, journal = {Microelectronics Reliability}, number = {9}, issn = {0026-2714}, doi = {10.1016/S0026-2714(03)00318-4}, pages = {1871 -- 1876}, year = {2003}, language = {en} } @inproceedings{DechantSeligerKennel2019, author = {Dechant, Eduard and Seliger, Norbert and Kennel, Ralph}, title = {Performance of a GaN Half Bridge Switching Cell with Substrate Integrated Chips}, series = {PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, N{\"u}rnberg}, booktitle = {PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, N{\"u}rnberg}, pages = {7}, year = {2019}, abstract = {Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance gives superior switching characteristics compared to circuits with packaged dies. Simulation and experimental results of an inverse double pulse test confirm our expectations. This study further reveals additional benefits of the proposed technology in terms of mechanical stability and thermal interfacing to heat sinks compared to circuits with packaged dies.}, language = {en} } @inproceedings{DechantSeligerKennel2019, author = {Dechant, Eduard and Seliger, Norbert and Kennel, Ralph}, title = {A study of dielectric breakdown of a half-bridge switching cell with substrate integrated 650V GaN dies}, series = {2019 IEEE International Workshop on Integrated Power Packaging (IWIPP), Toulouse, France}, booktitle = {2019 IEEE International Workshop on Integrated Power Packaging (IWIPP), Toulouse, France}, year = {2019}, abstract = {This paper proposes an ultra-low inductance half-bridge switching cell with substrate integrated 650V GaN bare dies. A vertical parallel-plate waveguide structure with 100 μm layer thickness results in a commutation loop inductance of 0.5 nH resulting in a negligible drain-source voltage overshoot in the inductive load standard pulse test. On the other hand reliable circuit operation requires an assessment of the isolation strength of the thin dielectric layer in the main commutation loop, because critical high local electric fields might occur between the pads. Measurements of the dielectric breakdown voltage followed by a statistical failure analysis provide a characteristic life of 14.7 kV and a 10\% quantile of 13.5kV in the Weibull fitted data. This characteristic life depends strongly on the ambient temperature and drops to 4.1kV at 125°C. Additionally, ageing tests show an increasing in dielectric breakdown voltage after 500h, 1000h and 2000h at 125°C high-temperature storage due to resin densification processes.}, language = {en} } @article{DechantSeligerKennel2019, author = {Dechant, Eduard and Seliger, Norbert and Kennel, Ralph}, title = {Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips}, series = {Microelectronics Reliability}, volume = {100-101}, journal = {Microelectronics Reliability}, pages = {113372}, year = {2019}, abstract = {We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs.}, language = {en} }