@inproceedings{HoellthalerHaglKennel2019, author = {H{\"o}llthaler, Julia and Hagl, Rainer and Kennel, Ralph}, title = {Bandwidth Improvements of Linear Direct Drives with a 100 kHz PWM-Frequency}, series = {2019 12th International Symposium on Linear Drives for Industry Applications (LDIA), Neuchatel, Switzerland}, booktitle = {2019 12th International Symposium on Linear Drives for Industry Applications (LDIA), Neuchatel, Switzerland}, year = {2019}, abstract = {A calculation method for a robust servo controller design depending on the sampling time and the processing dead time was developed for mechanically stiff drives. With a test stand for high dynamic and high positioning accuracy, the theoretical calculations for the high bandwidth improvements are verified. The test stand includes a voice coil motor and a power electronic with Gallium Nitride (GaN) power semiconductors for switching frequencies of more than 100kHz.}, language = {en} } @inproceedings{HoellthalerHaglKennel2019, author = {H{\"o}llthaler, Julia and Hagl, Rainer and Kennel, Ralph}, title = {Bandwidth Improvements for Current Control Loops with a 100 kHz PWM Frequency and GaN Power Semiconductors}, series = {2019 58th Annual Conference of the Society of Instrument and Control Engineers of Japan (SICE), Hiroshima, Japan}, booktitle = {2019 58th Annual Conference of the Society of Instrument and Control Engineers of Japan (SICE), Hiroshima, Japan}, year = {2019}, abstract = {A discrete-time design method for a robust current controller of a servo drive has been developed. It takes the sampling time, the processing dead time and the dynamic behavior of the A/D converter into account. The theoretical calculations are verified using a test stand for high dynamics. The test stand includes a voice coil motor and power electronics with Gallium Nitride (GaN) power semiconductors for switching frequencies of more than 100 kHz. The bandwidth of the current control loop can be improved from typically 1 kHz to 1.5 kHz with insulated-gate bipolar transistor (IGBT) power semiconductors in state-of-the-art motion control systems to 10 kHz and more.}, language = {en} }