@article{SeligerPoganyFuerboecketal.1997, author = {Seliger, Norbert and Pogany, D. and Fuerboeck, C. and Habas, P. and Gornik, E.}, title = {A laser beam method for evaluation of thermal time constant in smart power devices}, series = {Microelectronics Reliability}, volume = {37}, journal = {Microelectronics Reliability}, number = {10/11}, doi = {10.1016/S0026-2714(97)00149-2}, pages = {1727 -- 1730}, year = {1997}, language = {en} } @article{SeligerHabašGornik1996, author = {Seliger, Norbert and Habaš, Predrag and Gornik, Erich}, title = {A study of backside laser-probe signals in MOSFETs}, series = {Microelectronic Engineering}, volume = {31}, journal = {Microelectronic Engineering}, number = {1-4}, doi = {10.1016/0167-9317(95)00329-0}, pages = {87 -- 94}, year = {1996}, language = {en} } @article{DechantSeligerKennel2019, author = {Dechant, Eduard and Seliger, Norbert and Kennel, Ralph}, title = {Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips}, series = {Microelectronics Reliability}, volume = {100-101}, journal = {Microelectronics Reliability}, pages = {113372}, year = {2019}, abstract = {We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs.}, language = {en} }