@article{PecqueurMaltenbergerPetrukhinaetal.2016, author = {Pecqueur, S{\´e}bastien and Maltenberger, Anna and Petrukhina, Marina A. and Halik, Marcus and Jaeger, Arndt and Pentlehner, Dominik and Schmid, G{\"u}nter}, title = {Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications}, series = {Angewandte Chemie International Edition}, journal = {Angewandte Chemie International Edition}, number = {55}, publisher = {Wiley-VCH Verlag}, address = {Weinheim}, year = {2016}, abstract = {Ten new efficient p-dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promotes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.}, language = {en} }