TY - JOUR A1 - Versen, Martin A1 - Ernst, W. T1 - Row hammer avoidance analysis of DDR3 SDRAM T2 - Microelectronics Reliability N2 - A DDR3 SDRAM test setup implemented on the Griffin III test system from HILEVEL Technologies is used to analyse the row hammer bug. Row hammer pattern experiments are compared to standard retention tests for different manufacturing technologies. The row hammer effect is depending on the number of stress activation cycles. The analysis is extended to an avoidance scheme with refreshes similar to the Target Row Refresh scheme for the DDR4 SDRAM technology. KW - DDR4 SDRAM technology Y1 - 2020 UR - https://opus4.kobv.de/opus4-rosenheim/frontdoor/index/index/docId/1614 UR - https://doi.org/10.1016/j.microrel.2020.113744 SP - 113744 ER -