TY - JOUR A1 - Dechant, Eduard A1 - Seliger, Norbert A1 - Kennel, Ralph T1 - Power cycling and temperature endurance test of a GaN switching cell with substrate integrated chips T2 - Microelectronics Reliability N2 - We present a reliability study of a half-bridge switching cell with substrate integrated 650 V GaN HEMTs. Power Cycling Testing with a ΔTj of 100 K has revealed thermo-mechanically induced failures of contact vias after more than 220 kcycles. The via failure mode of contact opening is confirmed by reverse-bias pulsed IV-measurements to be primarily triggered by a ΔTj imposed thermal gradient and not by a high Tj. The chip electrical characteristics, however, remained unaffected during Power Cycling. Furthermore, a High Temperature Storage test at 125 °C for 5000 h has shown no changes in the electrical performance of substrate integrated GaN HEMTs. KW - switching cell Y1 - 2019 UR - https://opus4.kobv.de/opus4-rosenheim/frontdoor/index/index/docId/1547 UR - https://doi.org/10.1016/j.microrel.2019.06.064 VL - 100-101 SP - 113372 ER -