TY - JOUR A1 - Shur, M.S. A1 - Slade, Holly C. A1 - Jacunski, M.D. A1 - Owusu, A.A. A1 - Ytterdal, T. T1 - SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors T2 - Journal of The Electrochemical Society N2 - We describe physically based analytical models for n‐channel amorphous silicon thin film transistors and for n‐ and p‐channel polysilicon thin film transistors. The models cover all regimes of transistor operation: leakage, subthreshold, above‐threshold conduction, and the kink regime in polysilicon thin film transistors. The models contain a minimum number of parameters which are easily extracted and can be readily related to the structural and material properties of the thin film transistors. The models have been verified for a large number of devices to scale properly with device geometry. KW - Thin Film Transistors Y1 - 2020 UR - https://opus4.kobv.de/opus4-rosenheim/frontdoor/index/index/docId/1587 N1 - Invited paper: Elec. Chem. Soc. Proc.(October 1996) VL - 144 IS - 8 SP - 2833 EP - 2839 ER -