Externe Publikationen
Refine
Year of publication
Document Type
- Article (591)
- conference proceeding (article) (458)
- Part of a Book (207)
- conference proceeding (presentation, abstract) (73)
- Book (54)
- conference talk (40)
- Report (32)
- Review (19)
- Working Paper (17)
- Doctoral Thesis (14)
Language
Is part of the Bibliography
- no (1542)
Keywords
- Gebärmutterhalskrebs (14)
- additive manufacturing (14)
- Bemessung (11)
- Finite Elemente (11)
- Nichtlinearität (10)
- Politische Bildung (10)
- Stabilität (10)
- Betonbauteil (9)
- Bewehrung (9)
- Kohlenstofffaserverstärkter Kunststoff (9)
Institute
- Fakultät Angewandte Sozial- und Gesundheitswissenschaften (504)
- Fakultät Informatik und Mathematik (332)
- Fakultät Maschinenbau (271)
- Labor Empirische Sozialforschung (163)
- Institut für Sozialforschung und Technikfolgenabschätzung (IST) (158)
- Fakultät Bauingenieurwesen (134)
- Fakultät Angewandte Natur- und Kulturwissenschaften (110)
- Labor für Technikfolgenabschätzung und Angewandte Ethik (LaTe) (109)
- Regensburg Center of Health Sciences and Technology - RCHST (72)
- Fakultät Betriebswirtschaft (61)
Begutachtungsstatus
- peer-reviewed (330)
- begutachtet (32)
Studies conducted by R. Conrad (1970, 1973) and M. I. Posner et al (1969) led to the hypothesis that the prelingually deaf encode visually perceived verbal information on the basis of its form. To examine this hypothesis, the RTs of 19 congenitally deaf and 33 normal 9–16 yr olds were measured as the Ss compared successively presented pairs of upper- and lowercase letters. Results fail to support the hypothesis and demonstrate the importance of the effects of development and of modern education programs for the deaf on the encoding of perceived verbal materials. (French abstract) (33 ref) (PsycINFO Database Record (c) 2016 APA, all rights reserved)
An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model.
Psychotherapeutic possibilities of treating chronic pain are employed in two different ways: Firstly in the form of psychotherapy in patients whose strategies for coping with pain and/or pain genesis can be described in terms of psychopathological categories; secondly in the form of pain-coping training, which is generally indicated in the presence of chronic pain, in particular that which is traditionally termed organic. With respect to their effectiveness in achieving, in the first place, mood change, and in the assessment of symptoms, the individual procedures have been well tested. The question as to differential indication, which can most readily be applied to the use of biofeedback, remains largely unanswered.
An analytical model for the spatial distribution of potential, electric field and carrier densities is presented, assuming uniform doping density and constant quasi-Fermi potentials in the direction of modeling. Starting from the current relations a differential equation respecting two-dimensional effects is developed and solved approximately by decomposition in three regions with different preconditions: (a) flatband region, (b) constant spacecharge density and (c) strong inversion or accumulation. Inaccuracies arise mainly from violated preconditions at the interfaces between the different regions. Two-dimensional effects are respected in the analytical model of (b) only but they influence region (c) by means of boundary conditions at the interface of (b) and (c).
The investigations of this paper are focused to region (c). This part of our model is identical to the model of Hauser and Littlejohn[1]. They integrated a simplified form of the semiconductor-Poisson equation twice but were restricted to one-dimensional applications and thermal equilibrium. Our derivation allows for large electric fields and current densities perpendicular to the direction of modeling. From analytical considerations confirmed by numerical experiments we suggest preference to the gradual channel condition, with x and y defined according to Fig. 1. This definition allows the potentials to vary significantly with respect to y. We found that this holds for the quasi-Fermi potentials also. Furthermore an empirical model for the maximum width of strong-inversion layers in uniformly doped silicon films is presented in eqn (46).
Distinct electron and hole quasi-Fermi potentials, øf,n and øf,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of øf,n, øf,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of øf,p(t) depends on the device history and generation/recombination rates.
A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.< >