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A new method for fabrication of tunable InGaAsP-InP single-mode lasers without epitaxial overgrowth is reported. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 and 1595.2 nm.
Laterally coupled distributed feedback lasers with self-aligned ohmic contacts show the advantage of a considerably simplified fabrication process. These lasers exhibit superior spectral properties with full benefit from the gain coupling mechanism. Side-mode suppression ratios up to 55- and 3-dB bandwidths beyond 15 GHz were obtained for these devices.