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We present a new method for fabrication of tunable InGaAsP-InP single mode lasers without epitaxial overgrowth. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. To overcome the extensive and expensive overgrowth step we realized a surface grating on both sides of the ridge mesa, which provides DFB operation. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 nm and 1595.2 nm. A maximum of 11 wavelength channels with an average spacing of ~0.5 nm and a constant optical output power of ~0.5 mW are addressable.
A new method for fabrication of tunable InGaAsP-InP single-mode lasers without epitaxial overgrowth is reported. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 and 1595.2 nm.