Refine
Year of publication
- 1999 (1)
Document Type
- Article (1)
Language
- English (1)
Has Fulltext
- no (1)
Is part of the Bibliography
- no (1)
Keywords
The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm<sup>2</sup>/Vs