Refine
Year of publication
Document Type
- conference proceeding (article) (25)
- Article (11)
- Part of Periodical (6)
- Part of a Book (1)
Is part of the Bibliography
- no (43)
Keywords
- field emission (16)
- Current measurement (8)
- CATHODES (6)
- Iron (6)
- field emitter array (6)
- silicon (6)
- Etching (4)
- black silicon (4)
- Electron sources (3)
- FABRICATION (3)
- Forschung (3)
- Forschungsbericht (3)
- GaN (3)
- photoemission (3)
- Anodes (2)
- Feldelektronenemission (2)
- Field emitter arrays (2)
- GEOMETRY (2)
- Gallium nitride (2)
- LED (2)
- Logic gates (2)
- Scanning electron microscopy (2)
- Silicium (2)
- Stability analysis (2)
- Vacuum technology (2)
- Voltage measurement (2)
- electron source (2)
- field enhancement factor (2)
- semiconductor field emission (2)
- silicon tip (2)
- silicon tips (2)
- Carbon (1)
- Cathodes (1)
- Circuit stability (1)
- Coatings (1)
- Current stabilization (1)
- DLC (1)
- Electric fields (1)
- Electrical properties and parameters (1)
- Emissions (1)
- Emitter (1)
- Epitaxial growth (1)
- Gassensor (1)
- Halbleiterschicht (1)
- Herstellung (1)
- Ionenemission (1)
- Isolierschicht (1)
- Iterative closest point algorithm (1)
- Kathode (1)
- Künstliche Intelligenz (1)
- Laser ablation (1)
- Laser micromachining (1)
- Lead (1)
- Light emitting diodes (1)
- MeCpPtMe3 (1)
- Mica (1)
- Mo-coated (1)
- Nanostructured devices (1)
- Oxides (1)
- Photonics (1)
- Power system stability (1)
- RESISTANCE (1)
- Resistors (1)
- Semiconductor device measurement (1)
- Sensor arrays (1)
- Si (1)
- Si p/n junction (1)
- Silicon carbide (1)
- Silicon chip (1)
- Standards (1)
- Surface texture (1)
- Thermal stability (1)
- Triodes (1)
- Ultra-high vacuum (1)
- Vakuumsensor (1)
- XRF spectroscopy (1)
- benzocyclobutene (1)
- current fluctuation (1)
- current stability (1)
- electron sources (1)
- elektrischer Durchbruch (1)
- emission current stability (1)
- field emission cathodes (1)
- field emission noise (1)
- focused electron beam induced deposition (1)
- integrated gate electrode (1)
- integrated gate-electrode (1)
- integrated spacer (1)
- ionization vacuum gauge (1)
- nano emitter (1)
- p-Si tip (1)
- p-type Si (1)
- p-type Si-pillar array (1)
- photosensitivity (1)
- semiconductor (1)
- silicon field emitter (1)
- silicon tip array (1)
- surface oxide effects (1)
- tip arrays (1)
Institute
Begutachtungsstatus
- peer-reviewed (31)
Forschung 2019
(2019)
Precisely aligned high-aspect-ratio (HAR) silicon tip arrays were fabricated using enhanced reactive ion etching with an inductively-coupled-plasma followed by a sharpening oxidation. A gold thin film was then sputtered only on the tips of the HAR structures. Field-emission (FE) properties from Au-coated HAR p-Si tip array cathodes have been systematically investigated by means of field emission scanning microscopy (FESM). A rather high efficiency of the HAR Si structures (71% at 550 V), but limited homogeneous FE with currents of 1-600 nA might be correlated with the varying geometry of the tips and the presence of oxides. I-V measurements of single Au-coated HAR emitters revealed activation effects and the saturation current region at 3 nA. An increase of the saturation current by 4 orders of magnitude was observed during 20 hours of conditioning at constant voltage, which finally resulted in nearly reproducible FN curves with a ß-factor of 473. An excellent stability of the emission current of less than 1 % was obtained during the additional long-time conditioning at constant voltage. Optical switching under halogen lamp illumination resulted in at least 2 times higher saturation currents and showed a linear dependence of the FE current on the light color temperature.
Forschung 2018
(2018)