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In high-tech processing even smallest concentrations of metal ions in process media are of the utmost significance because they cause expensive production failures. Currently, cost-intensive equipment, special trained staff and time consuming analyses are necessary to detect these contaminations in order to avoid failures. The Centers of Excellence Nanochem and Sensorics at the University of Applied Sciences Regensburg (owner of patent PCT/EP2010/064833) and their industrial partner Micro-Epsilon GmbH are developing a new miniaturized measurement device which allows cost-effective real-time analysis of fluidic media for the first time. The system is fully automated and can be directly connected to wet-etch benches. Hence it allows continuous real-time surveillance of metal contaminations in the ppb-range through absorption spectroscopy in process media. For this purpose a very small sample amount of the process medium and a specific complexing agent are mixed together. This leads to an increase in the molar extinction coefficients and though even smallest contaminations become visible. The main parts of our development are the simulation of the different system components, their production and chemical analyses with the evaluation model.
Online trace analysis based on UV/Vis spectroscopy requires long detection paths. Therefore an isotropic wet etch process in silicon is developed to fabricate a 300 µm deep channel with low channel wall roughness for desired light guidance application. Four etchant compositions were compared in terms of etching rate, surface roughness and selectivity in a beaker process. The best fitting mixture was selected. To further increase the surface quality (bubble issue) a spin etcher tool is used for producing the channels. The dependence of homogeneity and defect density on media flux, and rotation velocity was investigated. Results show that high rotation velocity and high media flux lead to great defects in the channel wall. Through rotation of the wafer during etching, the etching rate of silicon rises compared to the beaker process due to the rapid removal of etch products and simultaneous supply of fresh etchant. After 38 min of etching, 300 µm deep semi-circular channels with high optical quality (Rq=10 nm±2 nm) over 3 m were produced.
Forschungsbericht 2013
(2014)