Filtern
Erscheinungsjahr
- 2023 (1)
Dokumenttyp
Sprache
- Englisch (1)
Volltext vorhanden
- nein (1)
Gehört zur Bibliographie
- nein (1)
Schlagworte
- durability (1)
- graphene compounds (1)
- ion mobility (1)
- semiconductor-insulator boundaries (1)
Institut
Begutachtungsstatus
- peer-reviewed (1)
In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.