1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials
- Distinct electron and hole quasi-Fermi potentials, øf,n and øf,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of øf,n, øf,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation ofDistinct electron and hole quasi-Fermi potentials, øf,n and øf,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of øf,n, øf,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of øf,p(t) depends on the device history and generation/recombination rates.…
| Author: | Martin J. W. Schubert, Bernd Höfflinger, D. Schröder, René P. Zingg |
|---|---|
| DOI: | https://doi.org/10.1016/0167-9317(91)90221-X |
| Parent Title (English): | Microelectronic Engineering |
| Document Type: | Article |
| Language: | English |
| Year of first Publication: | 1991 |
| Release Date: | 2021/04/01 |
| Volume: | 15 |
| Issue: | 1-4 |
| First Page: | 237 |
| Last Page: | 240 |
| Konferenzangabe: | 21st European Solid State Device Research Conference (Essderc '91), 16-19 September 1991, Montreux, Suisse |
| Institutes: | Fakultät Elektro- und Informationstechnik |
| Fakultät Elektro- und Informationstechnik / Labor Elektronik | |
| Publication: | Externe Publikationen |
| research focus: | Materialien und Produktion |
| Frontdoor-URL: | https://opus4.kobv.de/opus4-oth-regensburg/1577 |
