Open Access

Christian Prommesberger, Christoph Langer, Robert Damian Ławrowski, Rupert Schreiner

• Black silicon structures with integrated gate electrode were realized by using an improved fabrication process. An enhanced insulation layer was achieved by a combination of dry and wet oxidation, and a gold layer was evaporated as gate electrode. The black silicon structures were prepared with a RIE/ICP etching process at room temperature. Arrays of 16 and 100 apertures with buried p-doped blackBlack silicon structures with integrated gate electrode were realized by using an improved fabrication process. An enhanced insulation layer was achieved by a combination of dry and wet oxidation, and a gold layer was evaporated as gate electrode. The black silicon structures were prepared with a RIE/ICP etching process at room temperature. Arrays of 16 and 100 apertures with buried p-doped black silicon whiskers have been fabricated. These structures have an emitter height of approximately 1.5 μm with tip radii between 5 nm and 30 nm. The whiskers are surrounded by the gate electrode in a distance of 1.5 μm. Integral field emission measurements yielded an onset voltage of 92 V for 16 apertures and 60 V for 100 apertures for an emission current of 1 nA. Maximum emission currents up to 0.2 μA were observed for the array with 100 apertures at a cathode voltage of 200 V. Stability measurements showed a current fluctuation of ± 21% at a mean value of the emission current of 12 nA over a period of 30 minutes for 16 apertures with b-Si whiskers.…