Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup

  • The influence of residual gas pressure on the characteristics of black-Silicon field emitter arrays in a high voltage triode setup is investigated. I-Vcharacteristics at different pressure levels show a decrease of emission current with rising pressure. This can be explained by an increase of the work function and charging of the emitter surface due to adsorbates. The initial characteristics canThe influence of residual gas pressure on the characteristics of black-Silicon field emitter arrays in a high voltage triode setup is investigated. I-Vcharacteristics at different pressure levels show a decrease of emission current with rising pressure. This can be explained by an increase of the work function and charging of the emitter surface due to adsorbates. The initial characteristics can be restored by heating the FEA up to 110 °C during electron emission. This regeneration procedure enables an extension of the lifetime from about 20 h to 440 h at a residual gas pressure of 10 -5 mbar.show moreshow less

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Metadaten
Author:Simon EdlerORCiD, Walter Hansch, Christian PrommesbergerORCiD, Rupert SchreinerOTHORCiDGND
DOI:https://doi.org/10.1109/IVNC.2018.8520214
Parent Title (English):International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2018
Release Date:2021/05/27
Tag:emission current stability; field emitter array; semiconductor field emission; silicon tips
Pagenumber:1-2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Digitale Transformation
Frontdoor-URL:https://opus4.kobv.de/opus4-oth-regensburg/1130
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