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High current field emission from Si nanowires on pillar structures

  • We investigate the influence of the geometry and doping level on the performance of n-type silicon nanowire field emitters on silicon pillar structures. Therefore, multiple cathodes with 50 by 50 pillar arrays (diameter: 5 μm, height: 30 μm, spacing: 50 μm) were fabricated and measured in diode configuration. In the first experiment, we compared two geometry types using the same material. Geometry 1 is black silicon, which is a highly dense surface covering a forest of tightly spaced silicon needles resulting from self-masking during a plasma etching process of single crystal silicon. Geometry 2 are silicon nanowires, which are individual spaced-out nanowires in a crownlike shape resulting from a plasma etching process of single crystal silicon. In the second experiment, we compared two different silicon doping levels [n-type (P), 1–10 and <0.005 Ω cm] for the same geometry. The best performance was achieved with lower doped silicon nanowire samples, emitting 2 mA at an extraction voltage of 1 kV. The geometry/material combination with the best performance was used to assemble an integrated electron source. These electron sources were measured in a triode configuration and reached onset voltages of about 125 V and emission currents of 2.5 mA at extraction voltages of 400 V, while achieving electron transmission rates as high as 85.0%.

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Metadaten
Author:Philipp BuchnerORCiD, Matthias HausladenORCiD, Mathias BartlORCiD, Michael Bachmann, Rupert SchreinerORCiD
DOI:https://doi.org/10.1116/6.0003384
ISSN:2166-2754
Parent Title (English):Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Publisher:AIP
Document Type:Article
Language:English
Year of first Publication:2024
Release Date:2024/04/19
Tag:Doping; Electron sources; Field emitter arrays; Nanowires; Plasma processing; Semiconductors; Triodes
Volume:42
Issue:2
Article Number:022208
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
research focus:Sensorik
OpenAccess Publikationsweg:Hybrid Open Access - OA-Veröffentlichung in einer Subskriptionszeitschrift/-medium
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG