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Ultra-fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon Surfaces

  • The dynamics of strongly driven phase transitions at surfaces are studied by ultra-fast time-resolved reflection high energy electron diffraction. The surfaces are excited by an intense fs-laser pulse (pump) and probed by an ultra-short electron pulse with variable time delay. The order-disorder phase transition from a c(4 × 2) to a(2 × 1) of the bare Si(001) surface shows a transient decrease of the intensity of the c(4 × 2) spots which recovers on a time scale of a few hundred picoseconds indicating the excitation of the phase transition. On Si(111) a monolayer of Indium induces a (4 × 1) reconstruction which undergoes a Peierls like phase transition to a (8 × "2") reconstruction below 100 K. Upon laser excitation with a fluence of 3.4 mJ/cm 2 at a temperature of 72 K the phase transition was strongly driven. The (8 × "2")-diffraction spots instantaneously disappears, while the intensity of the (4 × 1)-spots increases. This increase of the (4 × 1) spot intensity excludes an explanation by the Debye-Waller-Effect and is evidence for a true structural phase transition at a surface. © 2010 Materials Research Society.

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Metadaten
Author:Simone Möllenbeck, Anja Hanisch-Blicharski, Paul Schneider, Manuel Ligges, Ping Zhou, Martin KammlerORCiDGND, Boris Krenzer, Michael Horn-von Hoegen
DOI:https://doi.org/10.1557/PROC-1230-MM03-09
Parent Title (English):MRS Online Proceedings Library
Publisher:Springer
Document Type:Article
Language:English
Year of first Publication:2009
Release Date:2022/11/24
Article Number:1230
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Nanoanalytik und Halbleiterchemie (Nanochem)
Publication:Externe Publikationen
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG