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Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors

  • Self-assembled and coherently strained Ge dots were grown on a Si/SiGe superlattice, which was deposited on a flat Si(001) substrate surface patterned with a regular array of straight trenches. The superlattice translates the surface modulation of the substrate into a strain-field modulation, which causes the Ge dots on its surface to form along straight lines above the buried trenches. This approach provides self-assembled Ge dots with excellent lateral periodicity, which might be useful for fabricating dot-based field-effect-transistors (DotFETs). Here, we propose the concept of a modulation-doped p-channel DotFET (p-MOD-DotFET). The p-MOD-DotFET relies on embedded Ge-rich nanostructures, which provide p-channels through the Ge-rich dots. A high Ge concentration in the dots is desirable in order to exploit the high hole mobility of Ge-rich material. We show that the commonly observed Si–Ge intermixing during Si capping of Ge dots can be suppressed by overgrowing the islands at low temperature.

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Metadaten
Author:Oliver G. SchmidtORCiD, Ullrich Denker, Michael W. Dashiell, Neng Yun Jin-Phillipp, Karl Eberl, Rupert SchreinerORCiDGND, Hedwig Gräbeldinger, Heinz C. Schweizer, Silke H. Christiansen, Frank Ernst
DOI:https://doi.org/10.1016/S0921-5107(01)00810-8
ISSN:1873-4944
ISSN:0921-5107
Parent Title (English):Materials Science and Engineering B
Publisher:Elsevier
Place of publication:New York, NY
Document Type:Article
Language:English
Year of first Publication:2002
Release Date:2023/04/20
Tag:CMOS; MOFDET alignment; MOSFET; Modulation
Field-effect transistor; Self-assembly islands
Volume:89
Issue:1-3
First Page:101
Last Page:105
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
Publication:Externe Publikationen
research focus:Produktion und Systeme
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG