Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors
- Self-assembled and coherently strained Ge dots were grown on a Si/SiGe superlattice, which was deposited on a flat Si(001) substrate surface patterned with a regular array of straight trenches. The superlattice translates the surface modulation of the substrate into a strain-field modulation, which causes the Ge dots on its surface to form along straight lines above the buried trenches. This approach provides self-assembled Ge dots with excellent lateral periodicity, which might be useful for fabricating dot-based field-effect-transistors (DotFETs). Here, we propose the concept of a modulation-doped p-channel DotFET (p-MOD-DotFET). The p-MOD-DotFET relies on embedded Ge-rich nanostructures, which provide p-channels through the Ge-rich dots. A high Ge concentration in the dots is desirable in order to exploit the high hole mobility of Ge-rich material. We show that the commonly observed Si–Ge intermixing during Si capping of Ge dots can be suppressed by overgrowing the islands at low temperature.
Author: | Oliver G. SchmidtORCiD, Ullrich Denker, Michael W. Dashiell, Neng Yun Jin-Phillipp, Karl Eberl, Rupert SchreinerORCiDGND, Hedwig Gräbeldinger, Heinz C. Schweizer, Silke H. Christiansen, Frank Ernst |
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DOI: | https://doi.org/10.1016/S0921-5107(01)00810-8 |
ISSN: | 1873-4944 |
ISSN: | 0921-5107 |
Parent Title (English): | Materials Science and Engineering B |
Publisher: | Elsevier |
Place of publication: | New York, NY |
Document Type: | Article |
Language: | English |
Year of first Publication: | 2002 |
Release Date: | 2023/04/20 |
Tag: | CMOS; MOFDET alignment; MOSFET; Modulation Field-effect transistor; Self-assembly islands |
Volume: | 89 |
Issue: | 1-3 |
First Page: | 101 |
Last Page: | 105 |
Institutes: | Fakultät Angewandte Natur- und Kulturwissenschaften |
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik | |
Begutachtungsstatus: | peer-reviewed |
Publication: | Externe Publikationen |
research focus: | Produktion und Systeme |
Licence (German): | Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG |